The Infineon IRFP250MPBF is a single N-channel power MOSFET from the IR MOSFET™ family, manufactured using proven silicon technology and supplied in an industry-standard TO-247 through-hole package. It features a maximum drain-source voltage of 200V and a maximum continuous drain current of 30A at 25°C, making it suitable for high-current power switching and power-conversion applications.
The device offers a maximum RDS(on) of 75mΩ at VGS = 10V, with a typical total gate charge of 82nC and gate-drain charge of 38nC. Gate threshold voltage ranges from 2V to 4V, while maximum gate-source voltage is ±20V, supporting reliable operation in power switching circuits.
The IRFP250MPBF has a maximum total power dissipation of 214W and a maximum junction-to-case thermal resistance of 0.7K/W. Its operating temperature range extends from -55°C to +175°C, with a maximum junction temperature of 175°C. Infineon highlights the family for its wide safe operating area, high current capability and performance in low-frequency power applications.
The device comes in a TO-247 M Series package with through-hole mounting. The IRFP250MPBF is supplied in tube packaging with 400 units per pack and is lead-free, halogen-free and RoHS compliant. Infineon currently lists the product as Not for New Design.
Key Features:
- Manufacturer: Infineon
- Part Number: IRFP250MPBF
- Family: IR MOSFET™
- Device Type: Power MOSFET
- Configuration: Single
- Polarity: N-Channel
- Drain-Source Voltage: 200V
- Continuous Drain Current: 30A @ 25°C
- Maximum RDS(on): 75mΩ @ 10V
- Typical Total Gate Charge: 82nC
- Gate-Drain Charge: 38nC
- Gate Threshold Voltage: 2V to 4V
- Maximum Gate-Source Voltage: ±20V
- Maximum Power Dissipation: 214W
- Maximum Junction-to-Case Thermal Resistance: 0.7K/W
- Operating Temperature: -55°C to +175°C
- Maximum Junction Temperature: 175°C
- Package: TO-247
- Mounting Type: Through Hole / THT
- Packaging: Tube
- Packing Quantity: 400 pcs
- Lead-Free: Yes
- Halogen-Free: Yes
- RoHS Compliant: Yes
- Product Status: Not for New Design.
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