Infineon IRLL024NTRPBF 55V Logic-Level N-MOSFET SOT-223

The Infineon IRLL024NTRPBF is a 55V single N-channel logic-level power MOSFET based on IR MOSFET™ / HEXFET® technology. It combines low on-resistance, fast switching, and avalanche capability in a compact SOT-223 surface-mount package for load switching, DC motors, SMPS, lighting, and battery-powered applications. Infineon currently lists the exact orderable part as Active.

Maximum drain-to-source voltage is 55V. Maximum RDS(on) is 65mΩ at VGS = 10V, 80mΩ at 5V, and 100mΩ at 4V. Gate-threshold voltage ranges from 1.0V to 2.0V, while the device is characterized for low-voltage logic-level gate drive.

Drain-current capability depends on PCB thermal conditions. The datasheet specifies up to 4.4A continuous drain current at 25°C on a one-square-inch copper board, while the minimum recommended FR-4 footprint is rated at 3.1A. Pulsed drain current is rated up to 12A.

Typical total gate charge is 10.4nC, with 5.5nC gate-to-drain charge. Typical switching characteristics under the specified test conditions include 7.4ns turn-on delay, 21ns rise time, 18ns turn-off delay, and 25ns fall time.

The device is fully avalanche rated with up to 120mJ single-pulse avalanche energy and supports a maximum ±16V gate-to-source voltage. Junction temperature ranges from -55°C to +150°C.

The exact IRLL024NTRPBF is supplied in a SOT-223 / TO-261AA package, with 2,500 devices per tape-and-reel and MSL Level 1 classification. Infineon’s current product page lists the device as RoHS compliant and halogen free.

Key Features:

• Manufacturer: Infineon Technologies
• Part Number: IRLL024NTRPBF
• Device Type: Power MOSFET
• Channel: N-Channel
• Configuration: Single
• Logic-Level Gate Drive
• VDS Maximum: 55V
• Maximum Drain Current: 4.4A under specified PCB condition
• Drain Current: 3.1A with minimum recommended footprint
• Pulsed Drain Current: 12A
• RDS(on): 65mΩ max at 10V
• RDS(on): 80mΩ max at 5V
• RDS(on): 100mΩ max at 4V
• VGS(th): 1.0V to 2.0V
• Maximum VGS: ±16V
• Typical Gate Charge: 10.4nC
• Typical Qgd: 5.5nC
• Typical Ciss: 510pF
• Avalanche Energy: 120mJ
• Maximum Power: 2.1W under specified PCB condition
• Junction Temperature: -55°C to +150°C
• Package: SOT-223 / TO-261AA
• Mounting: Surface Mount
• Packaging: Tape & Reel
• Reel Quantity: 2,500 pcs
• MSL: Level 1
• RoHS Compliant
• Halogen Free
• Product Status: Active.