The onsemi BCP56T1G is an NPN silicon epitaxial bipolar junction transistor (BJT) designed for medium-power surface-mount applications. It is suitable for audio amplifier circuits, current-driving stages, and general-purpose switching and amplification applications. The device is housed in a compact SOT-223 / TO-261-4 surface-mount package with good power dissipation capability.
The BCP56T1G features a collector-emitter voltage (VCEO) of 80V, a collector-base voltage (VCBO) of 100V, and an emitter-base voltage (VEBO) of 5V. It supports a continuous collector current of 1A and a peak collector current of 2A, with maximum power dissipation of 1.5W under the specified PCB mounting conditions.
For the standard BCP56 device, DC current gain hFE ranges from 40 to 250 at IC = 150mA and VCE = 2V. Maximum collector-emitter saturation voltage is 0.5V at IC = 500mA, while the typical current-gain bandwidth product is 130MHz. The device supports both wave and reflow soldering and is Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Features:
- Manufacturer: onsemi
- Part Number: BCP56T1G
- Device Type: Bipolar Junction Transistor
- Polarity: NPN
- Collector-Emitter Voltage VCEO: 80V
- Collector-Base Voltage VCBO: 100V
- Emitter-Base Voltage VEBO: 5V
- Continuous Collector Current: 1A
- Peak Collector Current: 2A
- Maximum Power Dissipation: 1.5W
- DC Current Gain hFE: 40 to 250 under specified test conditions
- Maximum VCE(sat): 0.5V
- Typical Transition Frequency: 130MHz
- Package: SOT-223-4 / TO-261-4
- Mounting Type: Surface Mount
- Package Size: Approx. 6.50 × 7.00 × 1.63mm
- Junction and Storage Temperature: -65°C to +150°C
- Packaging: 7-inch reel, 1000 units
- Pb-Free, Halogen-Free/BFR-Free and RoHS Compliant
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