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Samsung K4B4G1646E-BYMA 4Gb DDR3L 1866Mbps SDRAM FBGA96

Original price was: $16.00.Current price is: $15.00.

Samsung K4B4G1646E-BYMA is a 4Gb DDR3L SDRAM with 256M × 16 organization, up to 1866Mbps data rate, 1.35V low-voltage operation, and a 96-ball FBGA package.

Availability: 100000 in stock

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SKU: K4B4G1646E-BYMA Category: Brand:

The Samsung K4B4G1646E-BYMA is a 4Gb E-die DDR3L SDRAM designed for high-speed external memory applications in embedded systems, consumer electronics, networking equipment, and storage devices. Samsung’s DDR3 platform supports low-voltage 1.35V operation, an 8-bank architecture, and data rates including 1866Mbps.

The device provides 4Gb capacity, equivalent to 512MB, with a 256M × 16-bit organization. The BYMA speed grade supports data transfer rates up to approximately 1866Mbps per pin, corresponding to an effective clock rate of about 933MHz. Samsung’s official DDR3 documentation identifies the MA speed grade with DDR3-1866 operation.

DDR3 features include eight internal banks, 8-bit prefetch, programmable CAS latency, burst length 8, burst chop 4, on-die termination, ZQ calibration, auto-precharge, self-refresh, and asynchronous reset. Samsung’s DDR3 documentation confirms the 8-bank and 8-bit-prefetch architecture and support for 1.35V DDR3L operation.

The K4B4G1646E-BYMA uses a 96-ball FBGA surface-mount package, providing a compact footprint for high-density PCB designs. Samsung’s DDR3 platform documentation lists 96-ball FBGA packaging and 2KB page size for x16 devices.

Samsung’s current official DDR3 page states that the DDR3 product family has been discontinued, and the former exact-product URL now redirects to the archived DDR3 family page. Availability should therefore be checked carefully for new or long-life designs.

Key Features:

  • Manufacturer: Samsung Semiconductor
  • Part Number: K4B4G1646E-BYMA
  • Memory Type: DDR3L SDRAM
  • Die Generation: E-die
  • Memory Density: 4Gb / 512MB
  • Organization: 256M × 16-bit
  • Data Width: x16
  • Maximum Data Rate: Approx. 1866Mbps/pin
  • Effective Clock: Approx. 933MHz
  • Low-Voltage DDR3L Operation: 1.35V Class
  • Internal Banks: 8
  • Prefetch: 8-bit
  • Burst Length: 8
  • Burst Chop: 4
  • On-Die Termination
  • ZQ Calibration
  • Auto Precharge
  • Self Refresh
  • Asynchronous Reset
  • Package: 96-Ball FBGA
  • Mounting Type: Surface Mount
  • Lifecycle: Samsung DDR3 Family Discontinued.

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