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23K256T-I/SN Microchip 256-Kbit 20MHz Low-Power SPI Serial SRAM SOIC-8

原价为:$2.00。当前价格为:$1.50。

Microchip 23K256T-I/SN is a 256-Kbit (32KB) low-power SPI serial SRAM supporting a 2.7V-to-3.6V supply, up to 20MHz operation, Byte, 32-byte Page, and Sequential access modes, and an industrial −40°C to +85°C temperature range in an SOIC-8 tape-and-reel package.

剩余量: 库存 100000 件

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SKU: 23K256T-I/SN 分类: 品牌:

The 23K256T-I/SN from Microchip Technology is a 256-Kbit low-power SPI serial SRAM organized as 32,768 × 8 bits, providing 32KB of volatile memory. It interfaces directly with microcontrollers through an SPI-compatible serial bus using SCK, SI, SO, and CS signals, making it useful for adding external working memory without a wide parallel bus.

The 23K256 operates from a 2.7V to 3.6V supply, making it well suited to 3.3V digital systems. The industrial-temperature version supports a maximum SPI clock frequency of 20MHz at the specified 3.0V operating condition. Maximum read current is 3mA at 1MHz, 6mA at 10MHz, and 10mA at 20MHz.

Three memory-access modes are supported: Byte, Page, and Sequential. Byte mode accesses one byte per operation, Page mode operates within a 32-byte page, and Sequential mode automatically increments the internal address counter across page boundaries to access the full memory array continuously.

The device operates using SPI Mode 0, with instructions, addresses, and data transferred MSB first. A dedicated HOLD input allows an active serial transaction to be paused without resetting the sequence, enabling the host controller to service higher-priority interrupts or other SPI peripherals.

As an SRAM device, the 23K256 is intended for fast temporary data storage rather than nonvolatile retention. The datasheet specifies a typical 1.2V RAM data-retention voltage; complete removal of power does not preserve stored data as an EEPROM or Flash memory would.

In the full ordering code 23K256T-I/SN, “T” identifies tape-and-reel packaging, “I” specifies the −40°C to +85°C industrial-temperature range, and “SN” identifies the 8-lead narrow-body SOIC package. The official Microchip package drawing specifies a 4.90mm × 3.90mm body, 6.00mm overall width, 1.75mm maximum height, and 1.27mm lead pitch.

MicrochipDirect currently lists the exact 23K256T-I/SN orderable device with 3,300 units per tape-and-reel, an 8-lead SOIC package, and a −40°C to +85°C temperature range. Microchip currently classifies the 23K256 product family as In Production.

Key Specifications

  • Manufacturer: Microchip Technology
  • Manufacturer Part Number: 23K256T-I/SN
  • Product Family: 23K256
  • Memory Type: Low-Power Serial SRAM
  • Memory Capacity: 256 Kbit
  • Byte Capacity: 32KB
  • Organization: 32,768 × 8 Bits
  • Memory Technology: Volatile SRAM
  • Interface: SPI
  • SPI Mode: Mode 0
  • Maximum Clock Frequency: 20MHz
  • Supply Voltage: 2.7V to 3.6V
  • Page Size: 32 Bytes
  • Number of Pages: 1,024
  • Access Modes: Byte, Page, and Sequential
  • Sequential Read/Write: Supported
  • HOLD Function: Supported
  • Typical RAM Retention Voltage: 1.2V
  • Maximum Read Current: 3mA at 1MHz
  • Maximum Read Current: 6mA at 10MHz
  • Maximum Read Current: 10mA at 20MHz
  • Typical Standby Current: 1μA at 3.6V
  • Maximum Standby Current: 4μA at 3.6V and +85°C
  • ESD Protection: 2kV
  • Temperature Grade: Industrial
  • Operating Temperature: −40°C to +85°C
  • Package: SOIC-8
  • Microchip Package Code: SN
  • Package Body: Approximately 4.90 × 3.90mm
  • Overall Width: Approximately 6.00mm
  • Maximum Height: 1.75mm
  • Lead Pitch: 1.27mm
  • Lead Count: 8
  • Mounting Type: Surface Mount
  • Packing Media: Tape and Reel
  • Reel Quantity: 3,300 Units
  • RoHS: Compliant
  • Halogen-Free: Yes
  • Product Family Status: In Production

Pin Functions

  • Pin 1 — CS: Chip Select Input
  • Pin 2 — SO: Serial Data Output
  • Pin 3 — NC: No Connection
  • Pin 4 — VSS: Ground
  • Pin 5 — SI: Serial Data Input
  • Pin 6 — SCK: Serial Clock Input
  • Pin 7 — HOLD: Hold Input
  • Pin 8 — VCC: Supply Voltage

Typical Applications

Suitable for microcontroller memory expansion, communication buffers, sensor-data buffering, data-acquisition equipment, industrial control systems, embedded devices, and other applications requiring compact 3.3V high-speed temporary storage. Because the device is volatile SRAM, applications requiring data retention after power removal should also provide nonvolatile storage.

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