The Alpha & Omega Semiconductor (AOS) AON7264E is a high-performance 60V N-channel enhancement-mode power MOSFET designed for efficient power switching, secondary synchronous rectification, and DC-DC power conversion applications. Featuring a continuous drain current rating of 28A at 25°C case temperature and low on-state resistance, this device delivers excellent switching performance in a compact DFN3x3A-8L surface-mount package.
Built using AOS’s advanced AlphaSGT™ trench power MOSFET technology, the AON7264E offers a maximum drain-source on-resistance of 9.5mΩ at VGS = 10V and 13.3mΩ at VGS = 4.5V. Its low conduction resistance helps minimize power losses, reduce heat generation, and improve efficiency in switching power supplies and other power management circuits.
The device features a typical total gate charge of 14.5nC at 10V gate drive and 7nC at 4.5V gate drive, enabling efficient switching with reduced gate-drive power requirements. Its typical input capacitance of 1100pF and gate-to-drain charge of 3.5nC support high-frequency power conversion applications.
For enhanced reliability, the AON7264E includes integrated ESD protection with a typical HBM Class 2 rating. It is also subjected to 100% Unclamped Inductive Switching (UIS) testing and gate resistance testing to improve robustness in demanding power electronic applications.
The AON7264E supports a maximum gate-source voltage of ±20V, a pulsed drain current rating of 80A, and a maximum power dissipation of 27.5W at 25°C case temperature. Its operating junction temperature range of -55°C to +150°C makes it suitable for industrial power electronics and compact power conversion systems.
Housed in a miniature DFN3x3A-8L package measuring 3.0 × 3.0 × 0.8mm, the device supports high-density PCB layouts and automated SMT assembly. Its low RDS(on), reduced gate charge, and compact design make it an excellent choice for high-efficiency power supplies, synchronous rectification, and power management applications.
Key Specifications:
- Manufacturer: Alpha & Omega Semiconductor (AOS)
- Part Number: AON7264E
- Product Series: AlphaSGT™
- Product Type: N-Channel Power MOSFET
- Channel Configuration: Single N-Channel
- Operating Mode: Enhancement Mode
- MOSFET Technology: Trench Power AlphaSGT™
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 28A (TC = 25°C)
- Continuous Drain Current at TC = 100°C: 25A
- Continuous Drain Current at TA = 25°C: 17A
- Pulsed Drain Current (IDM): 80A
- Maximum RDS(on): 9.5mΩ (VGS = 10V, ID = 17A)
- Maximum RDS(on): 13.3mΩ (VGS = 4.5V, ID = 15A)
- Gate Threshold Voltage (VGS(th)): 1.4V to 2.4V
- Typical Gate Threshold Voltage: 1.8V
- Maximum Gate-Source Voltage: ±20V
- Typical Total Gate Charge (Qg): 14.5nC at 10V
- Typical Total Gate Charge (Qg): 7nC at 4.5V
- Typical Gate-to-Drain Charge (Qgd): 3.5nC
- Typical Input Capacitance (Ciss): 1100pF
- Typical Output Capacitance (Coss): 300pF
- Typical Reverse Transfer Capacitance (Crss): 28pF
- Maximum Power Dissipation: 27.5W (TC = 25°C)
- Maximum Junction-to-Case Thermal Resistance: 4.5°C/W
- ESD Protection: HBM Class 2 (Typical)
- Device Testing: 100% UIS and Gate Resistance Tested
- Operating Junction Temperature: -55°C to +150°C
- Package: DFN3x3A-8L (DFN 3×3 EP)
- Package Dimensions: 3.0 × 3.0 × 0.8mm
- Mounting Type: Surface Mount (SMD/SMT)
- Qualification: Industrial
- Compliance: RoHS Compliant
- Packaging: Tape & Reel
- Standard Reel Quantity: 5,000 Pieces
- Product Status: Full Production
Typical Applications:
- High-efficiency switching power supplies
- Secondary synchronous rectification
- DC-DC power converters
- Power management circuits
- Low-voltage power switching
- Industrial power electronics
- Compact power supply modules
- Electronic load switching systems
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