The BAS28,215 from Nexperia is a dual high-speed switching-diode device containing two planar silicon diodes in a compact surface-mount package. The two diodes are electrically independent and have no internal connection, allowing each diode to be used separately in high-speed switching and signal-processing circuits.
Each diode has a 75V maximum reverse-voltage rating and an 85V repetitive peak reverse-voltage rating. Under the specified FR-4 PCB mounting conditions, continuous forward current is rated at 215mA per diode, while repetitive peak forward current is rated at 500mA.
The device provides a maximum reverse-recovery time of only 4ns when switched from 10mA forward current to 10mA reverse current under the specified test conditions. Maximum diode capacitance is 1.5pF, helping reduce capacitive loading in high-speed signal paths.
Maximum forward voltage is 715mV at 1mA, 855mV at 10mA, 1V at 50mA, and 1.25V at 150mA. Maximum reverse leakage current is 1μA at 75V and 25°C.
Maximum total power dissipation is 250mW with one diode loaded under the specified PCB conditions. Maximum junction temperature is 150°C, and the storage-temperature range is −65°C to +150°C. Actual power capability depends on PCB copper area, ambient temperature, and simultaneous loading of both diodes.
The BAS28,215 is supplied in a four-terminal SOT143B surface-mount package measuring approximately 2.9mm × 1.3mm × 1.0mm with a 1.9mm lead pitch. Pins 1 and 2 are the diode cathodes, while pins 3 and 4 are the corresponding anodes. The device-marking code is JT followed by a manufacturing-site code.
The “,215” ordering suffix specifies 7-inch tape-and-reel packaging with the applicable Q3/T4 product orientation. The orderable part is rated MSL 1 and complies with RoHS and REACH requirements and Nexperia’s lead-free and halogen-free definitions.
Key Specifications
- Manufacturer: Nexperia
- Manufacturer Part Number: BAS28,215
- Base Device: BAS28
- Device Type: High-Speed Switching Diode
- Number of Diodes: Two
- Internal Configuration: Independent / Unconnected
- Semiconductor Material: Silicon
- Maximum Reverse Voltage: 75V
- Repetitive Peak Reverse Voltage: 85V
- Continuous Forward Current: 215mA per Diode
- Repetitive Peak Forward Current: 500mA
- Non-Repetitive Peak Forward Current: 4A at 1μs
- Maximum Reverse-Recovery Time: 4ns
- Maximum Diode Capacitance: 1.5pF
- Maximum Forward Voltage: 715mV at 1mA
- Maximum Forward Voltage: 855mV at 10mA
- Maximum Forward Voltage: 1V at 50mA
- Maximum Forward Voltage: 1.25V at 150mA
- Maximum Reverse Leakage: 1μA at 75V and 25°C
- Maximum Power Dissipation: 250mW with One Diode Loaded
- Maximum Junction Temperature: +150°C
- Storage Temperature: −65°C to +150°C
- Maximum Junction-to-Ambient Thermal Resistance: 500K/W
- Maximum Junction-to-Solder-Point Thermal Resistance: 360K/W
- Package: SOT143B / SOT-143
- Terminal Count: Four
- Package Dimensions: Approximately 2.9mm × 1.3mm × 1.0mm
- Lead Pitch: 1.9mm
- Device Marking: JT Plus Manufacturing-Site Code
- Mounting Type: Surface Mount
- Packaging: 7-Inch Tape and Reel
- Moisture Sensitivity Level: MSL 1
- Qualification: AEC-Q101
- Compliance: RoHS, REACH, Lead-Free, and Halogen-Free
- Product Status: Production
Pin Configuration
- Pin 1 K1: Diode 1 Cathode
- Pin 2 K2: Diode 2 Cathode
- Pin 3 A2: Diode 2 Anode
- Pin 4 A1: Diode 1 Anode
Typical Applications
Suitable for high-speed digital switching, pulse shaping, signal clamping, level shifting, low-current rectification, interface circuits, and other surface-mount switching applications. Forward current, reverse voltage, pulse duration, junction capacitance, switching speed, and PCB thermal conditions should be verified in the final design.
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