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Diodes 2N7002T-7-F 60V 115mA N-Channel MOSFET SOT-523

Original price was: $363.00.Current price is: $318.00.

Diodes 2N7002T-7-F is a 60V N-channel enhancement-mode MOSFET featuring 115mA continuous drain current, 7.5Ω maximum RDS(on) at 5V gate drive, and 150mW power dissipation. Housed in an ultra-small SOT-523 package, it is ideal for signal switching, DC-DC converters, power management, and battery-powered electronic applications.

Availability: 100000 in stock

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SKU: 2N7002T-7-F/3000pcs Category: Brand:
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The Diodes Incorporated 2N7002T-7-F is a compact N-channel enhancement-mode MOSFET designed for efficient small-signal switching, power management, and low-power electronic applications. Featuring a drain-source voltage rating of 60V and a continuous drain current rating of 115mA at 25°C ambient temperature, this transistor provides reliable switching performance in an ultra-small SOT-523 surface-mount package.

The 2N7002T-7-F features a maximum drain-source on-resistance of 7.5Ω at VGS = 5V and ID = 50mA, helping minimize conduction losses in low-current switching applications. Its low gate threshold voltage, low input capacitance, and fast switching characteristics make it suitable for compact electronic circuits and microcontroller-controlled switching designs.

The device supports a continuous gate-source voltage rating of ±20V and features a maximum power dissipation of 150mW at 25°C ambient temperature. With a typical input capacitance of 22pF, typical turn-on delay of 7ns, and typical turn-off delay of 11ns, it provides efficient switching performance for a variety of control applications.

Housed in a miniature SOT-523 package, the 2N7002T-7-F supports high-density PCB layouts and automated SMT assembly. Its operating junction temperature range of -55°C to +150°C makes it suitable for portable electronics, battery-powered systems, DC-DC converters, and general-purpose electronic switching circuits.

Key Specifications:

  • Manufacturer: Diodes Incorporated (DIODES)
  • Part Number: 2N7002T-7-F
  • Product Series: 2N7002T
  • Product Type: N-Channel MOSFET
  • Channel Configuration: Single N-Channel
  • Operating Mode: Enhancement Mode
  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 115mA (TA = 25°C)
  • Continuous Drain Current at 100°C: 73mA
  • Pulsed Drain Current (IDM): 800mA
  • Maximum RDS(on): 7.5Ω (VGS = 5V, ID = 50mA)
  • Gate Threshold Voltage (VGS(th)): 1V to 2V
  • Continuous Gate-Source Voltage: ±20V
  • Pulsed Gate-Source Voltage: ±40V
  • Maximum Power Dissipation: 150mW (TA = 25°C)
  • Input Capacitance (Ciss): 22pF Typical
  • Output Capacitance (Coss): 11pF Typical
  • Reverse Transfer Capacitance (Crss): 2pF Typical
  • Turn-On Delay Time: 7ns Typical
  • Turn-Off Delay Time: 11ns Typical
  • Operating Junction Temperature: -55°C to +150°C
  • Package: SOT-523 (3-Pin)
  • Mounting Type: Surface Mount (SMD/SMT)
  • Moisture Sensitivity Level: MSL 1
  • Compliance: RoHS Compliant, Lead-Free, Halogen-Free
  • Packaging: Tape & Reel
  • Standard Reel Quantity: 3,000 Pieces

Typical Applications:

  • Small-signal electronic switching
  • DC-DC converter control circuits
  • Power management systems
  • Battery-powered electronic devices
  • Solid-state relay circuits
  • Relay and solenoid drivers
  • LED and lamp switching circuits
  • Microcontroller-controlled load switching
  • Compact consumer electronic devices

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