Sale!

Diodes DMN2400UV-7 Dual 20V N-Channel MOSFET SOT563

Original price was: $671.00.Current price is: $650.00.

Diodes DMN2400UV-7 is a dual 20V N-channel MOSFET with 1.33A maximum continuous drain current, 0.50Ω maximum RDS(on) at 4.5V, 0.5nC typical gate charge, and a compact SOT563 package.

Availability: 100000 in stock

- +
SKU: DMN2400UV-7/3000pcs Category: Brand:

The Diodes Incorporated DMN2400UV-7 is a dual N-channel enhancement-mode MOSFET designed to combine low on-resistance with fast switching performance. It is rated for 20V drain-source voltage and up to 1.33A continuous drain current at TA = 25°C, making it suitable for power-management functions, battery-powered systems, solid-state relays, and load switches.

At VGS = 5V and ID = 200mA, RDS(on) is 0.30Ω typical and 0.48Ω maximum. Maximum RDS(on) is 0.50Ω at VGS = 4.5V and 0.70Ω at VGS = 2.5V, enabling operation in low-voltage logic-controlled power-switching applications.

The device features a 0.5V to 0.9V gate-threshold range, only 0.5nC typical total gate charge, and 36pF typical input capacitance. Typical turn-on delay is approximately 4.06ns and rise time approximately 7.28ns, supporting efficient high-speed switching.

The DMN2400UV-7 is supplied in a compact 6-pin SOT563 package. Maximum power dissipation is 530mW, and the operating/storage junction temperature range is -55°C to +150°C. The -7 version is supplied on tape and reel with 3,000 devices per reel and carries an MSL 1 rating. It is lead-free, RoHS compliant, halogen-free, and antimony-free.

Key Features:

  • Manufacturer: Diodes Incorporated
  • Part Number: DMN2400UV-7
  • Device Type: MOSFET
  • Configuration: Dual
  • Channel: N-Channel + N-Channel
  • Mode: Enhancement
  • Drain-Source Voltage: 20V
  • Gate-Source Voltage: ±12V
  • Continuous Drain Current: 1.33A @ 25°C
  • Continuous Drain Current: 0.84A @ 85°C
  • Pulsed Drain Current: 3A
  • RDS(on): 0.48Ω Max @ VGS = 5V
  • RDS(on): 0.50Ω Max @ VGS = 4.5V
  • RDS(on): 0.70Ω Max @ VGS = 2.5V
  • RDS(on): 0.90Ω Max @ VGS = 1.8V
  • Gate Threshold Voltage: 0.5V to 0.9V
  • Typical Total Gate Charge: 0.5nC
  • Typical Input Capacitance: 36pF
  • Typical Output Capacitance: 5.7pF
  • Typical Reverse Transfer Capacitance: 4.2pF
  • Maximum Power Dissipation: 530mW
  • Operating / Storage Temperature: -55°C to +150°C
  • ESD-Protected Gate: Yes
  • Package: SOT563
  • Mounting Type: Surface Mount
  • MSL: Level 1
  • Packaging: Tape & Reel
  • Reel Quantity: 3,000 pcs
  • Lead-Free / RoHS Compliant
  • Halogen and Antimony Free.

Reviews

There are no reviews yet.

Be the first to review “Diodes DMN2400UV-7 Dual 20V N-Channel MOSFET SOT563”
Shopping Cart