The DMG1012UW-7 from Diodes Incorporated is a compact N-channel enhancement-mode MOSFET designed for low-power switching applications requiring high voltage capability and minimal PCB space.
The device features a maximum drain-source voltage rating of 100V and a continuous drain current capability of 115mA. It provides reliable switching performance for low-current power management and signal control applications.
With a maximum RDS(on) of 6Ω at VGS = 10V, the DMG1012UW-7 offers suitable conduction performance for small load switching circuits. The MOSFET features low gate charge characteristics, helping reduce switching losses and improve efficiency in portable and battery-powered electronic systems.
The device is housed in a compact SOT-323 (SC-70) surface-mount package, allowing high-density PCB designs while maintaining reliable electrical performance. It is suitable for applications including load switches, voltage level shifting, power management circuits, battery-powered devices, consumer electronics, and general-purpose switching applications.
Key Features
- N-channel enhancement MOSFET
- Drain-source voltage VDS: 100V
- Continuous drain current ID: 115mA
- RDS(on): 6Ω max @ VGS = 10V
- Gate-source voltage: ±20V
- Low gate charge
- Low power consumption
- High voltage capability
- Compact SMD package
- Package: SOT-323 (SC-70)
- Mounting type: Surface Mount
- RoHS compliant
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