FDA59N30 onsemi 300V 59A 56mΩ N-Channel UniFET Power MOSFET TO-3P

The FDA59N30 from onsemi is a high-voltage N-channel UniFET power MOSFET based on planar-stripe and DMOS technology. It is optimized for low on-state resistance, improved switching performance, and high avalanche-energy capability in PFC, UPS, AC-DC power-supply, and other high-voltage power-conversion applications.

The device has a 300V drain-to-source voltage rating and supports 59A continuous drain current at a 25°C case temperature. Continuous drain current is rated at 35A when the case temperature reaches 100°C, while pulsed drain current is rated up to 236A. Practical current capability depends on switching frequency, safe operating area, and thermal conditions.

At VGS=10V and ID=29.5A, static drain-to-source on-resistance is 47mΩ typical and 56mΩ maximum. Gate-threshold voltage is specified from 3V to 5V; this value indicates the beginning of conduction rather than the gate voltage required for full enhancement.

Typical total gate charge is 77nC, with a specified maximum of 100nC. Typical gate-to-source and gate-to-drain charges are 22nC and 40nC, respectively. Typical input, output, and reverse-transfer capacitances are 3590pF, 710pF, and 80pF.

The FDA59N30 provides a 1734mJ single-pulse avalanche-energy rating, a 50mJ repetitive avalanche rating, and 100% avalanche testing. Its intrinsic body diode supports 59A continuous and 236A pulsed current, with a maximum forward voltage of 1.4V and a typical reverse-recovery time of 246ns.

Maximum power dissipation is 500W at TC=25°C, maximum junction-to-case thermal resistance is 0.25°C/W, and the operating and storage junction-temperature range is −55°C to +150°C. The device is supplied in an isolated TO-3P-3L through-hole package, with 450 units per tube.

Key Specifications

• Manufacturer: onsemi
• Manufacturer Part Number: FDA59N30
• Device Type: N-Channel Power MOSFET
• Technology Family: UniFET
• Configuration: Single
• Drain-to-Source Voltage: 300V
• Continuous Drain Current: 59A at TC=25°C
• Continuous Drain Current: 35A at TC=100°C
• Pulsed Drain Current: 236A
• Gate-to-Source Voltage: ±30V
• Typical On-Resistance: 47mΩ
• Maximum On-Resistance: 56mΩ
• On-Resistance Conditions: VGS=10V, ID=29.5A
• Gate-Threshold Voltage: 3V to 5V
• Typical Total Gate Charge: 77nC
• Maximum Total Gate Charge: 100nC
• Typical Gate-to-Source Charge: 22nC
• Typical Gate-to-Drain Charge: 40nC
• Typical Input Capacitance: 3590pF
• Typical Output Capacitance: 710pF
• Typical Reverse-Transfer Capacitance: 80pF
• Single-Pulse Avalanche Energy: 1734mJ
• Repetitive Avalanche Energy: 50mJ
• Maximum Power Dissipation: 500W
• Maximum Junction-to-Case Thermal Resistance: 0.25°C/W
• Body-Diode Maximum Forward Voltage: 1.4V
• Body-Diode Typical Reverse-Recovery Time: 246ns
• Operating and Storage Temperature: −55°C to +150°C
• Package: TO-3P-3L / EIAJ SC-65
• Package Characteristic: Isolated
• Mounting Type: Through-Hole
• Packaging: Tube
• Standard Tube Quantity: 450 Units
• Compliance: Lead-Free
• Product Status: Active

Typical Applications

Suitable for uninterruptible power supplies, AC-DC power supplies, active power-factor-correction circuits, flat-panel-display power supplies, ATX computer power supplies, and electronic lamp ballasts. Bus-voltage margin, gate-drive capability, switching loss, body-diode recovery, avalanche conditions, safe operating area, and heatsink performance should be verified in the final design.