The FGAF40N60SMD is a 600V field-stop insulated-gate bipolar transistor (IGBT) manufactured by onsemi. Designed for high-power switching applications, it combines low conduction losses with fast switching performance, making it suitable for demanding power conversion systems.
This device features a maximum collector-emitter voltage of 600V, a continuous collector current rating of up to 80A at a case temperature of 25°C, and a typical collector-emitter saturation voltage of 1.9V at 40A and a 15V gate-emitter voltage. It supports junction temperatures up to 175°C and is housed in a TO-3PF through-hole package.
Key Features:
- Manufacturer: onsemi (ON Semiconductor)
- Part Number: FGAF40N60SMD
- Device Type: Field-Stop IGBT
- Collector-Emitter Voltage: 600V
- Continuous Collector Current: 80A at TC = 25°C; 40A at TC = 100°C
- Pulsed Collector Current: 120A under specified conditions
- Typical Collector-Emitter Saturation Voltage: 1.9V at IC = 40A, VGE = 15V
- Maximum Power Dissipation: 115W at TC = 25°C
- Operating Junction Temperature: -55°C to +175°C
- Package: TO-3PF
- Mounting Type: Through-Hole
Typical applications include solar inverters, uninterruptible power supplies (UPS), welding equipment, power factor correction (PFC) circuits, motor control, and home appliances.
Please consult the official onsemi datasheet for detailed electrical specifications, thermal requirements, and recommended operating conditions.
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