The IDW100E60 is a fast-switching emitter-controlled silicon power diode manufactured by Infineon Technologies. Designed for high-power applications, it features a 600V repetitive peak reverse voltage rating and a 100A nominal forward current rating.
The IDW100E60 offers fast reverse recovery, soft switching characteristics, and low forward voltage to help reduce conduction losses and improve power conversion efficiency. Its TO-247 through-hole package supports thermal management in demanding power electronic systems.
Key Features:
- Manufacturer: Infineon Technologies
- Part Number: IDW100E60
- Device Type: Emitter-Controlled Silicon Power Diode
- Repetitive Peak Reverse Voltage: 600V
- Nominal Forward Current: 100A
- Maximum Forward Current: Up to 150A under specified case-temperature conditions
- Typical Forward Voltage: 1.65V at 100A
- Reverse Recovery Time: 120ns under specified test conditions
- Maximum Junction Temperature: 175°C
- Package: TO-247 (PG-TO247-3)
- Mounting Type: Through-Hole
Typical applications include motor drives, welding equipment, photovoltaic power systems, and high-power switching circuits.
Please consult the official Infineon datasheet for detailed electrical characteristics, thermal conditions, and application guidelines. Infineon lists this product as not recommended for new designs, so verify availability and suitability before purchasing.
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