The AUIRF7342QTR from Infineon is an automotive-qualified dual P-channel HEXFET® power MOSFET designed for reliable power switching in automotive and other demanding applications. Two P-channel MOSFETs are integrated into a single SO-8 package, helping save PCB space in dual-load switching and power-control designs.
The device features a maximum drain-to-source voltage of -55V and a continuous drain current of up to -3.4A at TA=25°C with VGS=-10V. Its maximum RDS(on) is 105mΩ at VGS=-10V, helping reduce conduction losses and improve switching efficiency.
The AUIRF7342QTR uses advanced planar technology and supports logic-level gate drive. It also provides fast switching, dynamic dV/dt capability and full avalanche rating. Maximum gate-to-source voltage is ±20V, pulsed drain current reaches -27A, and single-pulse avalanche energy is rated at 114mJ.
The device operates over a -55°C to +150°C junction-temperature range and supports up to 2W power dissipation at TA=25°C. The AUIRF7342QTR is supplied in an SO-8 surface-mount package with 4000 devices per tape-and-reel, and is automotive qualified, PPAP capable, lead-free and RoHS compliant.
Key Specifications:
- Brand: Infineon
- Part Number: AUIRF7342QTR
- Base Part Number: AUIRF7342Q
- Product Type: Power MOSFET
- Configuration: Dual
- Polarity: P-Channel + P-Channel
- Drain-Source Voltage VDS: -55V
- Continuous Drain Current ID: -3.4A @ TA=25°C
- Continuous Drain Current: -2.7A @ TA=70°C
- Pulsed Drain Current IDM: -27A
- Maximum RDS(on): 105mΩ @ VGS=-10V
- Gate-Source Voltage VGS: ±20V
- Gate Threshold Voltage: -1V to -3V
- Typical Total Gate Charge: 26nC
- Single-Pulse Avalanche Energy: 114mJ
- Maximum Power Dissipation: 2W @ TA=25°C
- Maximum Junction Temperature: +150°C
- Operating Temperature: -55°C to +150°C
- Technology: HEXFET® / Gen 5
- Gate Drive: Logic Level
- Package: SO-8
- Mounting Type: SMD / SMT
- Qualification: Automotive
- PPAP Capable: Yes
- RoHS Compliant: Yes
- Packaging: Tape & Reel
- Standard Pack Quantity: 4000 pcs
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