The BSS123NH6433XTMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in a compact SOT-23 three-pin surface-mount package. It is designed for low-current switching, signal control, and general electronic switching applications.
This device features a 100V drain-to-source breakdown voltage, a continuous drain current of 190mA, and low gate charge. Its compact package supports space-efficient PCB layouts and automated SMT assembly. With AEC-Q101 automotive qualification, it is suitable for automotive electronic applications when operated within the specified electrical and thermal limits.
Key Specifications:
- Manufacturer: Infineon Technologies
- Part Number: BSS123NH6433XTMA1
- Device Type: N-Channel Enhancement-Mode MOSFET
- Drain-to-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 190mA
- Maximum Power Dissipation: 500mW
- Maximum Gate-to-Source Voltage (VGS): ±20V
- On-State Resistance: 6Ω maximum at VGS = 10V and ID = 190mA
- Gate Threshold Voltage: 1.8V maximum at ID = 13µA
- Operating Junction Temperature: -55°C to +150°C
- Package: PG-SOT23 / SOT-23-3
- Qualification: AEC-Q101 Automotive
- Mounting Type: Surface Mount (SMD)
Applications:
- Low-current electronic switching
- Signal control and level switching
- Automotive electronic control circuits
- Industrial control equipment
- Auxiliary power management circuits
- General-purpose switching applications
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