The BSS306NH6327XTSA1 is an N-channel enhancement-mode MOSFET manufactured by Infineon Technologies. Belonging to the OptiMOS™ 2 series, this component features a drain-source voltage of 30V and a continuous drain current of up to 2.3A at an ambient temperature of 25°C. It is designed for efficient switching and control applications in automotive and industrial electronic systems.
The device utilizes advanced MOSFET technology, providing low on-state resistance and reliable switching performance. Its maximum drain-source on-resistance is 57mΩ at a gate-source voltage of 10V and 93mΩ at 4.5V, supporting efficient operation in low-voltage switching circuits.
The BSS306NH6327XTSA1 features a logic-level gate drive rated at 4.5V, allowing compatibility with various low-voltage control circuits. Its gate-source voltage rating is ±20V, while the gate threshold voltage ranges from 1.2V to 2.0V.
The MOSFET supports a continuous drain current of 2.3A at 25°C and 1.8A at 70°C, with a maximum power dissipation of 0.5W at 25°C. Its operating junction temperature range of -55°C to +150°C makes it suitable for electronic applications exposed to demanding temperature conditions.
The component features a compact SOT-23 surface-mount package (PG-SOT23-3-5), helping reduce PCB space requirements and supporting automated SMT assembly. Its small package size makes it suitable for high-density electronic circuit designs.
As an automotive-qualified semiconductor, the BSS306NH6327XTSA1 meets the AEC-Q101 qualification standard. It also features avalanche-rated performance, fast switching characteristics, and dv/dt capability, making it suitable for applications requiring reliable electronic switching and load control.
The Infineon BSS306NH6327XTSA1 is suitable for automotive electronic modules, LED lighting systems, load switching circuits, power management, motor control, and industrial control equipment.
The device is supplied in tape-and-reel packaging, with a standard quantity of 3,000 pieces per reel, supporting automated pick-and-place assembly and high-volume electronic manufacturing.
Key Features:
- Manufacturer: Infineon Technologies
- Part Number: BSS306NH6327XTSA1
- Product Series: OptiMOS™ 2
- Product Type: N-Channel Enhancement MOSFET
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 2.3A at 25°C
- Drain Current at 70°C: 1.8A
- On-State Resistance: 57mΩ at VGS = 10V
- On-State Resistance: 93mΩ at VGS = 4.5V
- Gate-Source Voltage (VGS): ±20V
- Gate Threshold Voltage: 1.2V to 2.0V
- Maximum Power Dissipation: 0.5W
- Pulsed Drain Current: 9A
- Operating Temperature: -55°C to +150°C
- Package Type: SOT-23
- Package Code: PG-SOT23-3-5
- Mounting Type: Surface Mount (SMD/SMT)
- Automotive Qualification: AEC-Q101
- Packaging: Tape and Reel
- Standard Reel Quantity: 3,000 Pieces
- Moisture Sensitivity Level: MSL 1
- Environmental Compliance: Lead-Free, RoHS Compliant, Halogen-Free
Typical Applications:
- Automotive electronic control modules
- Automotive LED lighting systems
- Automotive body control units
- ADAS electronic systems
- Low-voltage switching circuits
- Load switching and power control
- DC power management
- Motor control circuits
- Industrial automation equipment
- Switching power supply applications
The Infineon BSS306NH6327XTSA1 combines 30V drain-source voltage, 2.3A continuous drain current, and low on-state resistance in a compact SOT-23 package. With logic-level gate drive characteristics and AEC-Q101 automotive qualification, it provides a reliable solution for automotive electronics, industrial control systems, and other applications requiring efficient MOSFET switching performance.
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