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Infineon IKW25N120T2 1200V 25A TRENCHSTOP 2 IGBT with Anti-Parallel Diode TO-247

Original price was: $1.80.Current price is: $1.65.

The Infineon IKW25N120T2 is a 1200V 25A TRENCHSTOP 2 IGBT with an integrated soft and fast recovery anti-parallel diode. Featuring low switching losses, low gate charge and high ruggedness in a TO-247-3 package, it is suitable for motor drives, frequency converters, UPS systems and industrial power applications.

Availability: 100000 in stock

Price and availability are subject to confirmation.
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SKU: IKW25N120T2 Category: Brand:

The Infineon IKW25N120T2 is a high-performance 1200V TRENCHSTOPâ„¢ 2 IGBT discrete power semiconductor designed for efficient high-voltage switching applications. It combines Infineon’s trench-cell and field-stop technologies with an integrated soft, fast recovery anti-parallel diode to achieve a balanced combination of conduction efficiency and switching performance.

The device provides a collector-emitter voltage rating of 1200V and a continuous collector current rating of 25A at 100°C, with up to 50A at 25°C. Its low switching losses, low gate charge and temperature-stable characteristics make it suitable for demanding power conversion systems.

The integrated emitter-controlled anti-parallel diode offers soft and fast recovery characteristics, helping reduce turn-on losses and electromagnetic interference. A positive temperature coefficient of VCE(sat) also facilitates parallel operation in higher-power designs.

IKW25N120T2 provides a 10µs short-circuit withstand time and is designed for switching frequencies in the 2kHz to 20kHz range. It is supplied in a robust PG-TO-247-3 through-hole package, making it suitable for industrial power electronics requiring efficient heat dissipation and high-voltage capability.

Key Features

  • Manufacturer: Infineon Technologies
  • Part Number: IKW25N120T2
  • Product Type: Discrete IGBT
  • Technology: TRENCHSTOPâ„¢ 2
  • Collector-Emitter Voltage: 1200V
  • Collector Current: 25A at 100°C
  • Collector Current: Up to 50A at 25°C
  • Pulsed Collector Current: Up to 100A
  • Integrated Anti-Parallel Diode
  • Soft and Fast Recovery Diode
  • Low Switching Losses
  • Low Gate Charge
  • High Ruggedness
  • Low EMI Emissions
  • Positive Temperature Coefficient
  • Short-Circuit Withstand Time: 10µs
  • Switching Frequency Range: 2kHz to 20kHz
  • Package: PG-TO-247-3 / TO-247-3
  • Mounting Type: Through Hole
  • RoHS Compliant
  • Lead-Free

Typical Applications

  • Motor Drives
  • Motor Control Systems
  • Frequency Converters
  • Variable Frequency Drives
  • Uninterruptible Power Supplies (UPS)
  • Industrial Inverters
  • Power Conversion Equipment
  • Home Appliances
  • High-Voltage Switching Systems
  • Industrial Power Electronics

The IKW25N120T2 is suitable for power electronics designs requiring a rugged 1200V IGBT with low switching losses, integrated freewheeling diode and reliable high-voltage switching performance.

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