The Infineon IRF3205PBF is a high-current 55V N-channel power MOSFET designed for low-voltage, high-current switching applications. Its combination of very low on-resistance, high current capability and industry-standard TO-220 packaging makes it suitable for power conversion, motor control and load-switching circuits.
The device has a maximum drain-source voltage (VDS) of 55V and a maximum RDS(on) of only 8mΩ at VGS = 10V, helping reduce conduction losses in high-current applications. Infineon’s current product data lists a maximum drain-current parameter of 110A at 25°C.
IRF3205PBF features a typical total gate charge of approximately 97.3nC at 10V, with a gate-drain charge of approximately 36nC. The gate threshold voltage range is 2V to 4V, while the maximum gate-source voltage rating is ±20V.
The device is based on Infineon’s proven planar MOSFET technology, providing a wide safe operating area and rugged switching performance. It is particularly suitable for applications where high current capability and low-frequency power switching are important.
The maximum power dissipation is specified at 150W, and the device supports a junction operating temperature range of -55°C to +175°C. Proper heatsinking and PCB thermal design are required when operating at high current or high power.
The IRF3205PBF is supplied in the standard TO-220 through-hole package, providing convenient mounting to heatsinks and compatibility with widely used power-electronics PCB layouts. Infineon lists the specific IRF3205PBF ordering code as Active, with tube packaging.
Key Features
- Manufacturer: Infineon Technologies
- Part Number: IRF3205PBF
- Product Type: Power MOSFET
- Channel Type: N-Channel
- Drain-Source Voltage VDS: 55V
- Maximum RDS(on): 8mΩ @ VGS = 10V
- ID @ 25°C Parametric Maximum: 110A
- Maximum Power Dissipation: 150W
- Typical Total Gate Charge QG: 97.3nC
- Gate-Drain Charge QGD: 36nC
- Gate Threshold Voltage: 2V to 4V
- Typical Gate Threshold Voltage: 3V
- Maximum Gate-Source Voltage: ±20V
- Maximum Junction Temperature: +175°C
- Operating Temperature: -55°C to +175°C
- Thermal Resistance Junction-to-Case: 1K/W
- Technology: Planar Power MOSFET
- High Current Capability
- Wide Safe Operating Area
- Package: TO-220
- Mounting Type: Through Hole / THT
- Packaging: Tube
- Standard Packing Size: 1000 pcs
- RoHS Compliant
- Product Status: Active
Typical Applications
- DC Motor Drives
- Motor Controllers
- DC/DC Converters
- Switching Power Supplies
- Inverters
- Load Switches
- Battery-Powered Systems
- Battery Management Power Stages
- UPS Systems
- Automotive Auxiliary Circuits
- LED Power Systems
- General High-Current Switching
The IRF3205PBF is well suited for power designs requiring a 55V N-channel MOSFET with very low 8mΩ on-resistance, high current capability and a rugged TO-220 package.
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