The IRF9530NPBF is a P-channel power MOSFET from Infineon Technologies and part of the HEXFET® power MOSFET family. It is designed for power management, switching circuits, and electronic load control applications.
The device features a drain-to-source voltage rating of -100V and a continuous drain current of up to -14A at a case temperature of 25°C. Its maximum on-state drain-to-source resistance is 200mΩ under specified test conditions of VGS = -10V and ID = -8.4A. The MOSFET supports a maximum gate-to-source voltage of ±20V and a power dissipation rating of up to 79W at a case temperature of 25°C.
The IRF9530NPBF comes in a TO-220AB through-hole package, supporting convenient PCB mounting and heatsink integration. Typical applications include switched-mode power supplies, DC motor control, inverters, load switching, and other electronic systems requiring P-channel power MOSFETs.
When selecting this device, evaluate load current, supply voltage, switching frequency, thermal conditions, and safe operating limits. Refer to the official Infineon datasheet to verify pin assignments, electrical characteristics, safe operating area, and thermal design requirements.
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