The IPD65R650CE from Infineon Technologies is a 650V CoolMOS™ CE N-channel power MOSFET based on superjunction technology. Designed to provide an optimized balance between performance, efficiency and cost, it is well suited for consumer electronics, power supplies and lighting applications.
The device features a maximum RDS(on) of 650mΩ, a typical total gate charge of 23nC, and fast switching characteristics to help reduce switching and conduction losses. Its high commutation ruggedness and easy gate-drive behavior support reliable operation in high-voltage switching circuits.
IPD65R650CE is supplied in a PG-TO252 / DPAK surface-mount package. Typical applications include PFC stages, hard-switching PWM stages, resonant switching converters, PC power supplies, adapters, LCD/LED TV power systems and indoor lighting.
Key Features
- 650V CoolMOS™ CE power MOSFET
- N-channel superjunction MOSFET technology
- Maximum RDS(on): 650mΩ
- Typical total gate charge: 23nC
- Fast switching performance
- Low conduction and switching losses
- High commutation ruggedness
- Easy gate-drive characteristics
- Package: PG-TO252 / DPAK
- Suitable for PFC, PWM and resonant switching applications
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