The IRF540NPBF from Infineon Technologies is a high-performance N-channel power MOSFET designed for switching and power management applications requiring high current capability, low conduction losses, and reliable operation.
The device features a maximum drain-source voltage rating of 100V and supports a continuous drain current of up to 33A. With a low maximum RDS(on) of approximately 44mΩ at VGS = 10V, the IRF540NPBF provides efficient power switching performance and reduced conduction losses.
The MOSFET utilizes advanced semiconductor technology to deliver fast switching speed, high ruggedness, and excellent thermal performance. Its low gate charge characteristics make it suitable for high-frequency switching applications while maintaining system efficiency.
The IRF540NPBF is supplied in a standard TO-220AB through-hole package, providing excellent heat dissipation and easy mounting on heatsinks. It is widely used in DC-DC converters, motor control systems, battery management systems, inverters, power supplies, and industrial switching applications.
Key Features
- N-channel power MOSFET
- Drain-source voltage: 100V
- Continuous drain current: 33A
- RDS(on): approximately 44mΩ @ VGS=10V
- Low gate charge
- Fast switching performance
- High current capability
- High thermal reliability
- Through-hole package
- Package: TO-220AB
- Suitable for power switching applications
- RoHS compliant
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