The IRFB4227PBF from Infineon Technologies is a high-performance N-channel power MOSFET designed for demanding power switching applications requiring high voltage capability, high current handling, and low conduction losses.
The device features a maximum drain-source voltage rating of 200V and supports a continuous drain current of up to 56A. With a low maximum RDS(on) of approximately 34mΩ at VGS = 10V, the IRFB4227PBF provides efficient switching performance with reduced power dissipation.
This MOSFET utilizes advanced trench technology to achieve excellent switching characteristics, high ruggedness, and improved thermal performance. The optimized gate charge helps reduce switching losses, making it suitable for high-frequency power conversion applications.
The IRFB4227PBF is supplied in a standard TO-220AB through-hole package, offering excellent thermal conductivity and easy heatsink mounting. It is widely used in switch-mode power supplies, DC-DC converters, motor drives, battery systems, UPS equipment, welding equipment, and industrial power control applications.
Key Features
- N-channel power MOSFET
- Drain-source voltage: 200V
- Continuous drain current: 56A
- RDS(on): approximately 34mΩ @ VGS=10V
- Low gate charge
- Fast switching capability
- High current handling capability
- Low conduction losses
- High thermal performance
- Through-hole package
- Package: TO-220AB
- Suitable for high-power switching applications
- RoHS compliant
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