The IRFP250NPBF from Infineon Technologies is a high-current N-channel power MOSFET designed for power switching and industrial applications. It features a maximum drain-to-source voltage of 200V and a continuous drain current of up to 30A at 25°C, providing a reliable solution for medium- and high-power switching circuits.
The device offers a maximum RDS(on) of 75mΩ at VGS = 10V, helping reduce conduction losses in power conversion systems. It also features a typical total gate charge of approximately 82nC, supporting efficient gate-drive operation and fast switching performance.
IRFP250NPBF is fully avalanche rated and provides strong dynamic dv/dt capability, helping improve ruggedness in demanding switching environments. Its wide safe operating area and high current capability make it suitable for applications such as DC motor drives, inverters, switched-mode power supplies, load switches, lighting systems, and battery-powered equipment.
The device is supplied in an industry-standard TO-247 through-hole package, offering effective thermal performance for higher power levels. It supports an operating junction temperature range of -55°C to +175°C and a maximum power dissipation of 214W.
Key Features
- N-channel power MOSFET
- Drain-to-source voltage: 200V
- Continuous drain current: 30A
- Maximum RDS(on): 75mΩ
- RDS(on) specified at VGS = 10V
- Typical total gate charge: 82nC
- Gate charge Qgd: 38nC
- Gate threshold voltage: 2V to 4V
- Maximum gate-source voltage: ±20V
- Maximum power dissipation: 214W
- Fast switching performance
- Dynamic dv/dt capability
- Fully avalanche rated
- Wide safe operating area
- Junction temperature: -55°C to +175°C
- Mounting: Through Hole
- Package: TO-247
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