The IRFR210TRPBF, officially styled IRFR210TRPbF by Vishay, is a single N-channel power MOSFET from Vishay Siliconix. It combines fast switching, repetitive-avalanche capability, dynamic dV/dt performance, and surface-mount construction for power switching and control applications. The IRFR210 version is supplied in a DPAK / TO-252 package.
The device has a 200V drain-to-source voltage rating and a ±20V maximum gate-to-source voltage. Continuous drain current is rated at 2.6A with TC=25°C and VGS=10V, decreasing to 1.7A at TC=100°C. Maximum pulsed drain current is 10A.
Maximum drain-to-source ON resistance is 1.5Ω at VGS=10V and ID=1.6A. Gate-threshold voltage ranges from 2.0V to 4.0V; this threshold indicates the onset of conduction and should not be interpreted as the recommended gate-drive voltage for achieving the specified ON resistance.
Maximum total gate charge is 8.2nC, including 1.8nC maximum gate-source charge and 4.5nC maximum gate-drain charge. Typical capacitances are 140pF input, 53pF output, and 15pF reverse-transfer capacitance under the specified conditions.
Typical switching characteristics include 8.2ns turn-on delay, 17ns rise time, 14ns turn-off delay, and 8.9ns fall time under Vishay’s specified test conditions. Vishay identifies fast switching as one of the main device features.
The MOSFET is repetitive-avalanche rated, with 95mJ single-pulse avalanche energy, 2.5mJ repetitive avalanche energy, a 2.7A avalanche-current rating, and a 5V/ns peak diode-recovery dV/dt rating.
Maximum power dissipation is 25W at TC=25°C. Junction-to-case thermal resistance is specified at a maximum of 5°C/W, and the operating-junction and storage-temperature range is −55°C to +150°C.
The exact IRFR210TRPbF uses the lead-free DPAK package. The “TR” version corresponds to Vishay’s T1 tape orientation; current official packing information specifies 16mm carrier tape, a 330mm / 13-inch reel, and 2,000 devices per reel.
Key Specifications
- Manufacturer: Vishay Siliconix
- Manufacturer Part Number: IRFR210TRPBF
- Official Styling: IRFR210TRPbF
- Base Device: IRFR210
- Device Type: Power MOSFET
- Channel Type: N-Channel
- Configuration: Single
- Drain-Source Voltage: 200V
- Gate-Source Voltage: ±20V
- Continuous Drain Current: 2.6A at TC=25°C
- Continuous Drain Current: 1.7A at TC=100°C
- Pulsed Drain Current: 10A
- Maximum RDS(on): 1.5Ω
- RDS(on) Test Condition: VGS=10V, ID=1.6A
- Gate Threshold Voltage: 2.0V to 4.0V
- Minimum Forward Transconductance: 0.80S
- Maximum Total Gate Charge: 8.2nC
- Maximum Qgs: 1.8nC
- Maximum Qgd: 4.5nC
- Typical Input Capacitance: 140pF
- Typical Output Capacitance: 53pF
- Typical Reverse Transfer Capacitance: 15pF
- Typical Turn-On Delay: 8.2ns
- Typical Rise Time: 17ns
- Typical Turn-Off Delay: 14ns
- Typical Fall Time: 8.9ns
- Single-Pulse Avalanche Energy: 95mJ
- Repetitive Avalanche Energy: 2.5mJ
- Avalanche Current: 2.7A
- Peak Diode-Recovery dV/dt: 5V/ns
- Maximum Power Dissipation: 25W at TC=25°C
- Maximum Junction-to-Case Thermal Resistance: 5°C/W
- Operating Junction Temperature: −55°C to +150°C
- Storage Temperature: −55°C to +150°C
- Package: DPAK / TO-252
- Mounting Type: Surface Mount
- Lead-Free: Yes
- Packaging Code: TR
- Packaging: Tape and Reel
- Carrier Tape Width: 16mm
- Reel Diameter: 330mm / 13in
- Quantity per Reel: 2,000 pcs
Typical Applications
Suitable for switch-mode power supplies, DC-DC converters, relay and motor drivers, industrial power-control circuits, load switching, and other applications requiring a 200V N-channel power MOSFET. Designs should provide suitable gate drive because the specified RDS(on) is characterized at VGS=10V.
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