K4B4G1646E-BYK0 Samsung 4Gb DDR3L SDRAM x16 Memory IC 96-FBGA

The K4B4G1646E-BYK0 from Samsung is a high-performance 4Gb DDR3L SDRAM memory device based on E-die technology. It features a 256M × 16-bit organization and provides reliable high-speed memory performance for embedded systems, networking equipment, industrial controllers and consumer electronics.
The device supports DDR3L-1600 operation with 11-11-11 timing and is backward compatible with DDR3L-1333 and DDR3L-800 modes. Its low-voltage DDR3L architecture operates at 1.35V, helping reduce system power consumption and thermal requirements compared with standard DDR3 memory devices.
K4B4G1646E-BYK0 supports advanced DDR3 SDRAM features including double data rate transfer, on-die termination (ODT), ZQ calibration, programmable CAS latency, burst operation and asynchronous reset. The device is supplied in a compact 96-ball FBGA x16 package, providing high-speed signal integrity and efficient PCB integration.
It is suitable for industrial control systems, networking equipment, set-top boxes, smart terminals, printers, medical devices, embedded computing platforms and other applications requiring external DDR3L memory expansion.