The onsemi SBC856BDW1T1G is a dual PNP general-purpose bipolar transistor integrating two PNP devices in a compact SOT-363 / SC-88 surface-mount package. It is intended for general-purpose amplifier and low-power switching applications. The S prefix identifies the automotive/control-change version, which is AEC-Q101 qualified and PPAP capable.
The device is rated for 65V collector-emitter voltage, 80V collector-base voltage, and 5V emitter-base voltage. Maximum continuous collector current is 100mA, with a 200mA peak collector-current rating.
At IC = 2mA and VCE = 5V, DC current gain hFE ranges from 220 to 475, with 290 typical. Maximum collector-emitter saturation voltage is 0.3V at IC = 10mA and 0.65V at IC = 100mA under the specified base-current conditions. Minimum transition frequency is 100MHz, and maximum output capacitance is 4.5pF.
Maximum total device dissipation is 380mW, while junction and storage temperature range is -55°C to +150°C. The exact SBC856BDW1T1G orderable part is supplied in a SOT-363 / SC-88-6 package, marked 3B, with MSL Level 1 classification and 3,000 devices per tape-and-reel. onsemi currently lists the part as Active.
Key Features:
- Manufacturer: onsemi
- Part Number: SBC856BDW1T1G
- Device Type: Bipolar Junction Transistor
- Configuration: Dual
- Polarity: Dual PNP
- Application: General-Purpose Amplifier
- Collector-Emitter Voltage: 65V
- Collector-Base Voltage: 80V
- Emitter-Base Voltage: 5V
- Continuous Collector Current: 100mA
- Peak Collector Current: 200mA
- hFE: 220 to 475 at 2mA
- Typical hFE: 290
- Maximum VCE(sat): 0.3V at 10mA
- Maximum VCE(sat): 0.65V at 100mA
- Minimum Transition Frequency: 100MHz
- Maximum Output Capacitance: 4.5pF
- Maximum Total Power Dissipation: 380mW
- Junction / Storage Temperature: -55°C to +150°C
- Package: SOT-363 / SC-88-6
- Device Marking: 3B
- Mounting Type: Surface Mount
- MSL: Level 1
- Packaging: Tape & Reel
- Reel Quantity: 3,000 pcs
- AEC-Q101 Qualified
- PPAP Capable
- Pb-Free / Halogen-Free / RoHS Compliant
- Product Status: Active.
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