The PMST4403 from Nexperia is a PNP bipolar switching transistor supplied in a compact SOT323 (SC-70) surface-mount package. It is designed for general-purpose switching and linear-amplification applications, with the PMST4401 serving as its complementary NPN device.
The device has a −40V collector-to-emitter voltage rating, a −40V collector-to-base rating, and a −5V emitter-to-base rating. Maximum continuous collector current is −600mA, while peak collector current is rated at −800mA.
At VCE=−2V and IC=−150mA under the specified pulsed test conditions, DC current gain hFE ranges from 100 to 300. At IC=−500mA, minimum hFE is 20.
Maximum collector-emitter saturation voltage is 400mV at IC=−150mA and IB=−15mA, increasing to 750mV maximum at IC=−500mA and IB=−50mA. Maximum base-emitter saturation voltage is 950mV and 1.3V under the corresponding test conditions.
The PMST4403 provides a minimum transition frequency of 200MHz. Maximum turn-on time is 40ns and maximum turn-off time is 350ns under the specified switching conditions, supporting general-purpose high-speed switching applications.
Maximum power dissipation is 200mW, maximum junction temperature is 150°C, and both ambient operating and storage temperature ranges extend from −65°C to +150°C. Junction-to-ambient thermal resistance is specified at up to 625K/W on the stated FR-4 PCB footprint.
The transistor uses a three-lead SOT323 / SC-70 package. Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector. The marking code is %2T, where the percentage symbol represents the manufacturing-site code.
Key Specifications
- Manufacturer: Nexperia
- Manufacturer Part Number: PMST4403
- Device Type: PNP Switching Transistor
- Transistor Technology: Bipolar Junction Transistor
- Polarity: PNP
- Complementary NPN Device: PMST4401
- Collector-Emitter Voltage VCEO: −40V
- Collector-Base Voltage VCBO: −40V
- Emitter-Base Voltage VEBO: −5V
- Maximum Continuous Collector Current: −600mA
- Peak Collector Current: −800mA
- Peak Base Current: −200mA
- DC Current Gain hFE: 100–300 at IC=−150mA
- Minimum hFE: 20 at IC=−500mA
- Maximum VCE(sat): 400mV at IC=−150mA
- Maximum VCE(sat): 750mV at IC=−500mA
- Maximum VBE(sat): 950mV at IC=−150mA
- Maximum VBE(sat): 1.3V at IC=−500mA
- Minimum Transition Frequency: 200MHz
- Maximum Turn-On Time: 40ns
- Maximum Turn-Off Time: 350ns
- Maximum Collector Capacitance: 8.5pF
- Maximum Power Dissipation: 200mW
- Maximum Junction Temperature: +150°C
- Operating Temperature: −65°C to +150°C
- Storage Temperature: −65°C to +150°C
- Maximum Junction-to-Ambient Thermal Resistance: 625K/W
- Package: SOT323 / SC-70
- Lead Count: 3
- Pin 1: Base
- Pin 2: Emitter
- Pin 3: Collector
- Marking Code: %2T
- Mounting Type: Surface Mount
- Applications: Switching and Linear Amplification
- Product Status: Production
Typical Applications
Suitable for general-purpose switching, small-load drivers, signal amplification, interface control, level shifting, and compact portable electronic circuits. Nexperia specifically identifies switching and linear amplification as the intended application category.
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