Renesas 2SK2225-80-E#T2 is a high-voltage N-channel power MOSFET designed for high-speed power switching applications. It features a 1500V drain-to-source voltage rating (VDSS), 2A continuous drain current, and high breakdown voltage, making it suitable for circuits that require reliable switching under high-voltage conditions.
The device has a typical RDS(on) of 9Ω and a maximum of 12Ω at ID = 1A and VGS = 15V. Its typical input capacitance is 990pF, while the gate-to-source voltage rating is ±20V. With high-speed switching characteristics and relatively low drive current requirements, the 2SK2225-80-E#T2 is suitable for a variety of industrial and consumer power switching designs.
Key Features:
- Manufacturer: Renesas Electronics
- Part Number: 2SK2225-80-E#T2
- Device Type: N-Channel Power MOSFET
- Drain-to-Source Voltage (VDSS): 1500V
- Continuous Drain Current (ID): 2A
- Peak Drain Current: 7A
- RDS(on): 9Ω typical, 12Ω maximum
- Gate-to-Source Voltage (VGSS): ±20V
- Input Capacitance (Ciss): 990pF typical
- Output Capacitance (Coss): 125pF typical
- Reverse Transfer Capacitance (Crss): 60pF typical
- Channel Dissipation: 50W
- High-speed switching
- Low drive current
- Package: TO-3PF / TO-3PFP
- Mounting Type: Through Hole
- Packaging: Tube
The device is suitable for high-voltage switching, power switching circuits, industrial equipment, consumer electronics, power supplies and other switching applications where high voltage capability and reliable switching performance are required.
Reviews
There are no reviews yet.