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RHRP8120 onsemi 1200V 8A 70ns Hyperfast Recovery Diode TO-220AC

Original price was: $1.64.Current price is: $1.40.

onsemi RHRP8120 is a 1200V, 8A hyperfast recovery diode featuring a 70ns maximum reverse-recovery time, 100A surge-current capability, soft recovery, and a TO-220AC through-hole package.

Availability: 100000 in stock

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SKU: RHRP8120 Category: Brand:

The RHRP8120 from onsemi is a high-voltage hyperfast recovery rectifier diode featuring soft-recovery characteristics and a silicon-nitride-passivated, ion-implanted epitaxial planar structure. Its repetitive peak reverse voltage, working peak reverse voltage, and DC blocking voltage are all rated at 1200V, with an average rectified forward-current rating of 8A.

At a forward current of 8A and a current commutation rate of 200A/μs, the device provides a maximum reverse-recovery time of 70ns. At a 1A forward current, the maximum recovery time is 55ns. Its low stored charge and soft-recovery behavior help reduce ringing, electrical noise, and switching losses in power-conversion circuits.

The RHRP8120 supports an average forward current of 8A at a 140°C case temperature, a repetitive peak surge current of 16A, and a non-repetitive surge current of 100A. Maximum forward voltage is 3.2V at 8A and 25°C, while maximum power dissipation is 75W.

The device is avalanche-energy rated at 20mJ and supports an operating and storage junction-temperature range from −65°C to +175°C. Maximum junction-to-case thermal resistance is 2°C/W, typical reverse-recovery charge is 165nC, and typical junction capacitance is 25pF.

The component is supplied in a two-lead TO-220AC through-hole package, with the metal mounting flange electrically connected to the cathode. It is intended for switching power supplies, freewheeling circuits, clamping circuits, and other high-voltage power-switching applications.

Key Specifications:

  • Manufacturer: onsemi
  • Manufacturer Part Number: RHRP8120
  • Device Type: Hyperfast Recovery Rectifier Diode
  • Configuration: Single Diode
  • Semiconductor Technology: Silicon
  • Repetitive Peak Reverse Voltage: 1200V
  • Working Peak Reverse Voltage: 1200V
  • DC Blocking Voltage: 1200V
  • Average Forward Current: 8A
  • Repetitive Peak Forward Current: 16A
  • Non-Repetitive Surge Current: 100A
  • Maximum Reverse-Recovery Time: 70ns at 8A
  • Maximum Reverse-Recovery Time: 55ns at 1A
  • Typical Reverse-Recovery Charge: 165nC
  • Maximum Forward Voltage: 3.2V at 8A and 25°C
  • Maximum Reverse Leakage: 100μA at 1200V and 25°C
  • Typical Junction Capacitance: 25pF
  • Avalanche Energy: 20mJ
  • Maximum Power Dissipation: 75W
  • Maximum Junction-to-Case Thermal Resistance: 2°C/W
  • Operating and Storage Temperature: −65°C to +175°C
  • Package: TO-220AC / TO-220-2
  • Mounting Type: Through-Hole
  • Mounting-Flange Connection: Cathode
  • Compliance: RoHS Compliant

Typical Applications:

Suitable for switching power supplies, uninterruptible power supplies, power-factor-correction circuits, inverters, freewheeling paths, clamping circuits, and other high-frequency power-switching systems. Reverse-voltage margin, forward current, switching frequency, surge conditions, and thermal design should be evaluated in the final application.

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