The RUM001L02T2CL is a compact N-channel small-signal MOSFET manufactured by ROHM Semiconductor. Designed with low-voltage drive technology, this device operates with a gate drive voltage as low as 1.2V, making it suitable for low-power switching applications and portable electronic equipment requiring compact circuit designs and efficient power control.
The RUM001L02T2CL features a drain-source voltage rating of 20V and a continuous drain current rating of 100mA. Its low-voltage gate drive capability allows direct control from low-voltage logic circuits, helping simplify external drive circuitry and reduce overall component requirements in compact electronic designs.
The device offers low on-state resistance across different gate-source voltage conditions. Its typical RDS(on) values are 6Ω at VGS = 1.2V, 4.5Ω at VGS = 1.5V, 3Ω at VGS = 2.5V, and 2.5Ω at VGS = 4.5V. These characteristics provide flexible switching performance for different low-voltage circuit configurations.
The MOSFET incorporates a built-in gate-source protection diode to help protect the gate terminal against excessive voltage stress. It also features a gate-source voltage rating of ±8V and a gate threshold voltage range of 0.3V to 1.0V, supporting reliable operation in low-voltage switching circuits.
With a maximum power dissipation of 150mW and a pulsed drain current rating of 400mA, the RUM001L02T2CL is designed for small-signal switching applications. Its compact structure helps reduce PCB space requirements and supports high-density circuit layouts in portable electronic products.
The device is housed in a three-terminal VMT3 package, also classified as SOT-723 and JEITA SC-105AA. Measuring approximately 1.2 × 1.2 × 0.55mm, this surface-mount package is suitable for compact PCB designs and automated SMT assembly processes.
The RUM001L02T2CL is supplied in tape-and-reel packaging with a standard quantity of 8,000 pieces per reel. It is RoHS compliant and is classified as a standard-grade semiconductor product.
Typical applications include low-voltage switching circuits, portable electronic equipment, compact consumer electronics, and other electronic systems requiring small-signal N-channel MOSFETs with low-voltage drive capability.
Key Features:
- Manufacturer: ROHM Semiconductor
- Part Number: RUM001L02T2CL
- Product Type: N-Channel Small-Signal MOSFET
- Transistor Configuration: Single N-Channel
- Drain-Source Voltage (VDS): 20V
- Continuous Drain Current (ID): 100mA
- Pulsed Drain Current: 400mA
- Gate-Source Voltage (VGS): ±8V
- Gate Threshold Voltage: 0.3V to 1.0V
- Drive Voltage: 1.2V
- RDS(on): 6Ω Typical at VGS = 1.2V
- RDS(on): 4.5Ω Typical at VGS = 1.5V
- RDS(on): 3Ω Typical at VGS = 2.5V
- RDS(on): 2.5Ω Typical at VGS = 4.5V
- Maximum Power Dissipation: 150mW
- Input Capacitance (Ciss): 7.1pF Typical
- Protection Function: Built-in Gate-Source Protection Diode
- Package Type: VMT3 / SOT-723
- JEITA Package: SC-105AA
- Number of Pins: 3
- Package Dimensions: 1.2 × 1.2 × 0.55mm
- Mounting Type: Surface Mount (SMD/SMT)
- Packaging: Tape and Reel
- Standard Reel Quantity: 8,000 Pieces
- RoHS Status: Compliant
- Product Grade: Standard Grade
Typical Applications:
- Low-voltage switching circuits
- Portable electronic equipment
- Battery-powered electronic devices
- Compact consumer electronics
- Small-signal switching applications
- Low-power electronic control circuits
- Space-constrained PCB designs
- Electronic switching systems
The ROHM RUM001L02T2CL combines 20V drain-source voltage capability, 1.2V low-voltage drive, and a compact SOT-723 package. Its N-channel MOSFET architecture, built-in gate-source protection diode, and low on-state resistance make it a practical solution for compact, low-power switching applications and portable electronic designs.
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