The STGW60V60DF from STMicroelectronics is a V-series high-speed power IGBT based on advanced trench-gate field-stop technology. It integrates a very fast soft-recovery antiparallel diode and is optimized to balance conduction and switching losses in high-frequency power-conversion systems.
The device has a 600V collector-to-emitter voltage rating and an official 60A product-current class. Continuous collector current is rated at 80A with a 25°C case temperature, limited by bonding wires, and 60A with a 100°C case temperature. Pulsed collector current is rated up to 240A.
At VGE=15V, IC=60A, and TJ=25°C, collector-to-emitter saturation voltage is 1.85V typical and 2.30V maximum. Typical saturation voltage increases to 2.15V at 125°C and 2.35V at 175°C. Its positive saturation-voltage temperature coefficient and tight parameter distribution support safer parallel operation.
Typical total gate charge is 334nC, with 130nC gate-to-emitter charge and 58nC gate-to-collector charge. Typical input, output, and reverse-transfer capacitances are 8000pF, 280pF, and 170pF, respectively.
At VCE=400V, IC=60A, RG=4.7Ω, and TJ=25°C, typical turn-on energy is 0.75mJ, turn-off energy is 0.55mJ, and total switching energy is 1.3mJ. At a 175°C junction temperature, typical total switching energy is 2.3mJ.
The integrated soft-recovery diode has a typical forward voltage of 2.0V at 60A, with a specified maximum of 2.6V. Under 400V, 60A, and 1000A/μs recovery conditions, typical reverse-recovery time is 74ns and typical reverse-recovery charge is 703nC.
The STGW60V60DF is supplied in a three-lead TO-247 through-hole package. Pin 1 is gate, pin 2 is collector, and pin 3 is emitter, with the mounting tab connected to the collector. Maximum power dissipation is 375W, IGBT junction-to-case thermal resistance is 0.4°C/W, and the operating junction-temperature range is −55°C to +175°C.
Key Specifications
- Manufacturer: STMicroelectronics
- Manufacturer Part Number: STGW60V60DF
- Device Type: High-Speed Power IGBT
- Technology Family: V Series
- Device Structure: Trench-Gate Field-Stop
- Diode Configuration: Integrated Soft-Recovery Antiparallel Diode
- Collector-to-Emitter Voltage: 600V
- Official Product Current Class: 60A
- Continuous Collector Current: 80A at TC=25°C
- Continuous Collector Current: 60A at TC=100°C
- Pulsed Collector Current: 240A
- Gate-to-Emitter Voltage: ±20V
- Typical Saturation Voltage: 1.85V at 60A and 25°C
- Maximum Saturation Voltage: 2.30V at 60A and 25°C
- Gate-Threshold Voltage: 5V to 7V
- Typical Total Gate Charge: 334nC
- Typical Gate-to-Emitter Charge: 130nC
- Typical Gate-to-Collector Charge: 58nC
- Typical Input Capacitance: 8000pF
- Typical Output Capacitance: 280pF
- Typical Reverse-Transfer Capacitance: 170pF
- Typical Turn-On Energy: 0.75mJ
- Typical Turn-Off Energy: 0.55mJ
- Typical Total Switching Energy: 1.3mJ
- Diode Typical Forward Voltage: 2.0V at 60A
- Diode Typical Reverse-Recovery Time: 74ns
- Maximum Power Dissipation: 375W
- IGBT Junction-to-Case Thermal Resistance: 0.4°C/W
- Diode Junction-to-Case Thermal Resistance: 1.14°C/W
- Operating Junction Temperature: −55°C to +175°C
- Storage Temperature: −55°C to +150°C
- Package: TO-247
- Pin Configuration: Gate, Collector and Emitter
- Mounting Type: Through-Hole
- Packaging: Tube
- Product Grade: Industrial
- Environmental Grade: ECOPACK 2
- Product Status: Active / Volume Production
Typical Applications
Suitable for photovoltaic inverters, uninterruptible power supplies, welding equipment, power-factor-correction circuits, and very-high-frequency power converters. DC-bus margin, gate-drive capability, switching frequency, diode reverse recovery, parallel current sharing, safe operating area, and thermal performance should be verified in the final design.
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