The TEPT4400 from Vishay is an ambient light sensor based on a silicon NPN epitaxial planar phototransistor. It provides an analog photocurrent that varies with ambient illumination and is spectrally adapted to visible light in a manner similar to the human eye.
The device has a 570nm peak sensitivity wavelength and a spectral bandwidth from approximately 440nm to 800nm. Its angle of half sensitivity is ±30°, providing directional ambient-light sensing while covering a useful frontal field of view.
At VCE=5V with CIE Illuminant A, typical collector photocurrent is 200μA at 100lux. At 20lux, the specified photocurrent range is 15μA to 70μA. Vishay bins production devices into A, B, and C sensitivity groups according to photocurrent at 20lux.
The minimum collector-to-emitter breakdown voltage is 6V, maximum emitter-to-collector voltage is 1.5V, and maximum continuous collector current is 20mA. Maximum power dissipation is 100mW at ambient temperatures up to 55°C.
Collector dark current is 3nA typical and 50nA maximum at VCE=5V in darkness. Collector-to-emitter capacitance is approximately 16pF typical at 1MHz, and collector-to-emitter saturation voltage is approximately 0.1V under the specified illumination conditions.
The operating ambient-temperature range is −40°C to +85°C, with a storage range of −40°C to +100°C and a maximum junction temperature of 100°C. Junction-to-ambient thermal resistance is specified at 300K/W.
TEPT4400 is supplied in a 3mm T-1 through-hole package with a nominal 2.54mm lead pitch. Its leaded construction is suitable for through-hole PCB assembly and applications where direct optical exposure through an enclosure or front panel is required.
Vishay identifies applications including LCD display backlight dimming, mobile-device keypad backlighting, industrial automatic lighting control, and replacement of CdS photoresistors.
Key Specifications
- Manufacturer: Vishay
- Manufacturer Part Number: TEPT4400
- Device Type: Ambient Light Sensor
- Sensor Type: Silicon NPN Phototransistor
- Output Type: Analog Photocurrent
- Mounting Type: Through Hole
- Package: T-1
- Lens Diameter: Approximately 3mm
- Peak Sensitivity Wavelength: 570nm
- Spectral Bandwidth: 440nm to 800nm
- Angle of Half Sensitivity: ±30°
- Typical Photocurrent: 200μA at 100lux
- Photocurrent at 20lux: 15μA to 70μA
- Sensitivity Bins: A / B / C
- Minimum Collector-Emitter Breakdown Voltage: 6V
- Maximum Emitter-Collector Voltage: 1.5V
- Maximum Collector Current: 20mA
- Maximum Power Dissipation: 100mW
- Typical Collector Dark Current: 3nA
- Maximum Collector Dark Current: 50nA
- Typical Collector-Emitter Capacitance: 16pF
- Typical Collector-Emitter Saturation Voltage: 0.1V
- Maximum Junction Temperature: 100°C
- Operating Temperature: −40°C to +85°C
- Storage Temperature: −40°C to +100°C
- Junction-to-Ambient Thermal Resistance: 300K/W
- Nominal Lead Pitch: 2.54mm
- Maximum Soldering Temperature: 260°C for ≤3s
- Packaging: Bulk
- Packing Information: 1,000 pcs/bulk, MOQ 5,000 pcs
- Environmental: Pb-Free, RoHS Compliant, Halogen Free
Typical Applications
Suitable for LCD display backlight dimming, keypad backlighting, ambient-brightness sensing, automatic lighting control, industrial illumination systems, consumer electronics, and replacement of CdS photoresistors.
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