The ZVP3310FTA from Diodes Incorporated is a P-channel enhancement-mode vertical DMOS transistor supplied in a compact SOT-23 surface-mount package. It combines low input capacitance, fast switching, and low leakage for high-side load switching and low-power management circuits.
The device has a −100V drain-to-source voltage rating and a ±20V gate-to-source rating. Continuous drain current is rated at −75mA at 25°C ambient temperature, while pulsed drain current reaches −1.2A under a 10μs pulse with a 1% duty cycle.
At VGS=−10V and ID=−150mA, the specified maximum drain-to-source on-resistance is 20Ω. Gate-threshold voltage ranges from −1.5V to −3.5V; this threshold indicates the beginning of conduction and should not be treated as the voltage required for full enhancement.
Maximum input, output, and reverse-transfer capacitances are 50pF, 15pF, and 5pF, respectively. Maximum turn-on delay, rise time, turn-off delay, and fall time are each specified at 8ns under the stated switching test conditions.
Maximum power dissipation is 330mW, and the operating and storage junction-temperature range is −55°C to +150°C. Maximum zero-gate-voltage drain leakage is 1μA, while maximum gate-source leakage is ±20nA.
The ZVP3310FTA uses a three-terminal SOT-23 package with an approximate body size of 2.9mm × 1.3mm × 1.0mm. Its device marking is MR. The “TA” order code specifies tape-and-reel packaging with 3,000 units per reel, and the component is rated MSL 1.
Diodes Incorporated currently classifies the ZVP3310F family as NRND—Not Recommended for New Design. It remains applicable to legacy maintenance and existing designs, while new projects should evaluate a current P-channel MOSFET with suitable voltage, current, and on-resistance ratings.
Key Specifications
- Manufacturer: Diodes Incorporated
- Manufacturer Part Number: ZVP3310FTA
- Base Device: ZVP3310F
- Device Type: P-Channel Enhancement-Mode MOSFET
- Device Structure: Vertical DMOS
- Drain-to-Source Voltage: −100V
- Gate-to-Source Voltage: ±20V
- Continuous Drain Current: −75mA
- Pulsed Drain Current: −1.2A
- Pulsed Source Current: −1.2A
- Maximum On-Resistance: 20Ω
- On-Resistance Conditions: VGS=−10V, ID=−150mA
- Gate-Threshold Voltage: −1.5V to −3.5V
- Minimum On-State Drain Current: −300mA
- Minimum Forward Transconductance: 50mS
- Maximum Input Capacitance: 50pF
- Maximum Output Capacitance: 15pF
- Maximum Reverse-Transfer Capacitance: 5pF
- Maximum Turn-On Delay: 8ns
- Maximum Rise Time: 8ns
- Maximum Turn-Off Delay: 8ns
- Maximum Fall Time: 8ns
- Maximum Zero-Gate Drain Leakage: 1μA
- Maximum Gate Leakage: ±20nA
- Maximum Power Dissipation: 330mW
- Operating and Storage Temperature: −55°C to +150°C
- Package: SOT-23
- Number of Terminals: Three
- Device Marking: MR
- Mounting Type: Surface Mount
- Moisture Sensitivity Level: MSL 1
- Packaging: Tape and Reel
- Standard Reel Quantity: 3,000 Units
- Compliance: Lead-Free, RoHS, Halogen-Free, and Antimony-Free
- Product Status: NRND
Typical Applications
Suitable for high-side load switching, supply disconnect control, battery-powered equipment, low-current power management, signal switching, and other low-power circuits requiring a high negative drain-to-source voltage rating. Gate-drive voltage, load current, on-state voltage drop, pulse duration, and PCB thermal conditions should be verified in the final design.
评价
目前还没有评价