The BSS138W-7-F from Diodes Incorporated is a small-signal N-channel enhancement-mode MOSFET designed for low-power switching and voltage-level conversion applications. It provides reliable switching performance in compact electronic designs requiring low current consumption and minimal PCB space.
The device features a maximum drain-source voltage of 50V and a continuous drain current rating of 200mA. With a maximum RDS(on) of 3.5Ω at VGS = 10V, the BSS138W-7-F offers suitable conduction performance for low-current switching circuits.
The MOSFET supports a maximum gate-source voltage of ±20V and features low gate charge, enabling efficient operation in portable and battery-powered applications. Its small footprint allows designers to achieve higher PCB density while maintaining reliable switching capability.
BSS138W-7-F is supplied in a compact SOT-323 (SC-70) surface-mount package, making it suitable for applications including logic-level conversion, load switching, power management, battery-powered devices, consumer electronics, and general-purpose switching circuits.
Key Features
- N-channel enhancement MOSFET
- Drain-source voltage VDS: 50V
- Continuous drain current ID: 200mA
- RDS(on): 3.5Ω max @ VGS = 10V
- Gate-source voltage: ±20V
- Low gate charge
- Logic-level switching capability
- Low power consumption
- Compact SMD package
- Package: SOT-323 (SC-70)
- Mounting type: Surface Mount
- RoHS compliant
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