The BSZ063N04LS6ATMA1 from Infineon Technologies is a high-performance 40V N-channel power MOSFET based on Infineon’s advanced OptiMOS™ 6 technology. It is designed for high-efficiency power conversion applications requiring ultra-low conduction losses, high power density, and excellent thermal performance.
The device features optimized RDS(on) and improved figures of merit (FOM: RDS(on) × Qg / Qgd), enabling higher system efficiency, reduced switching losses, and improved thermal management. The optimized characteristics make it ideal for synchronous rectification applications in switching power supplies.
BSZ063N04LS6ATMA1 supports a 40V drain-source voltage rating and provides high current capability in a compact package. Its advanced trench MOSFET structure helps reduce power losses while maintaining reliable switching performance in demanding applications.
The device is supplied in a compact PG-TSDSON-8 (PQFN 3mm × 3mm) surface-mount package, allowing space-saving PCB designs and higher power density. It is widely used in server power supplies, desktop PC power systems, wireless chargers, quick chargers, ORing circuits, and industrial power conversion applications.
Key Features
- OptiMOS™ 6 power MOSFET
- N-channel MOSFET
- Drain-source voltage: 40V
- Ultra-low RDS(on)
- Improved switching performance
- High efficiency power conversion
- Optimized for synchronous rectification
- Suitable for ORing circuits
- High power density design
- Excellent thermal performance
- Package: PG-TSDSON-8
- Package size: 3mm × 3mm
- Surface mount technology
- RoHS compliant
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