The FDA59N30 from onsemi is a high-voltage N-channel UniFET power MOSFET based on planar-stripe and DMOS technology. It is optimized for low on-state resistance, improved switching performance, and high avalanche-energy capability in PFC, UPS, AC-DC power-supply, and other high-voltage power-conversion applications.
The device has a 300V drain-to-source voltage rating and supports 59A continuous drain current at a 25°C case temperature. Continuous drain current is rated at 35A when the case temperature reaches 100°C, while pulsed drain current is rated up to 236A. Practical current capability depends on switching frequency, safe operating area, and thermal conditions.
At VGS=10V and ID=29.5A, static drain-to-source on-resistance is 47mΩ typical and 56mΩ maximum. Gate-threshold voltage is specified from 3V to 5V; this value indicates the beginning of conduction rather than the gate voltage required for full enhancement.
Typical total gate charge is 77nC, with a specified maximum of 100nC. Typical gate-to-source and gate-to-drain charges are 22nC and 40nC, respectively. Typical input, output, and reverse-transfer capacitances are 3590pF, 710pF, and 80pF.
The FDA59N30 provides a 1734mJ single-pulse avalanche-energy rating, a 50mJ repetitive avalanche rating, and 100% avalanche testing. Its intrinsic body diode supports 59A continuous and 236A pulsed current, with a maximum forward voltage of 1.4V and a typical reverse-recovery time of 246ns.
Maximum power dissipation is 500W at TC=25°C, maximum junction-to-case thermal resistance is 0.25°C/W, and the operating and storage junction-temperature range is −55°C to +150°C. The device is supplied in an isolated TO-3P-3L through-hole package, with 450 units per tube.
Key Specifications
- Manufacturer: onsemi
- Manufacturer Part Number: FDA59N30
- Device Type: N-Channel Power MOSFET
- Technology Family: UniFET
- Configuration: Single
- Drain-to-Source Voltage: 300V
- Continuous Drain Current: 59A at TC=25°C
- Continuous Drain Current: 35A at TC=100°C
- Pulsed Drain Current: 236A
- Gate-to-Source Voltage: ±30V
- Typical On-Resistance: 47mΩ
- Maximum On-Resistance: 56mΩ
- On-Resistance Conditions: VGS=10V, ID=29.5A
- Gate-Threshold Voltage: 3V to 5V
- Typical Total Gate Charge: 77nC
- Maximum Total Gate Charge: 100nC
- Typical Gate-to-Source Charge: 22nC
- Typical Gate-to-Drain Charge: 40nC
- Typical Input Capacitance: 3590pF
- Typical Output Capacitance: 710pF
- Typical Reverse-Transfer Capacitance: 80pF
- Single-Pulse Avalanche Energy: 1734mJ
- Repetitive Avalanche Energy: 50mJ
- Maximum Power Dissipation: 500W
- Maximum Junction-to-Case Thermal Resistance: 0.25°C/W
- Body-Diode Maximum Forward Voltage: 1.4V
- Body-Diode Typical Reverse-Recovery Time: 246ns
- Operating and Storage Temperature: −55°C to +150°C
- Package: TO-3P-3L / EIAJ SC-65
- Package Characteristic: Isolated
- Mounting Type: Through-Hole
- Packaging: Tube
- Standard Tube Quantity: 450 Units
- Compliance: Lead-Free
- Product Status: Active
Typical Applications
Suitable for uninterruptible power supplies, AC-DC power supplies, active power-factor-correction circuits, flat-panel-display power supplies, ATX computer power supplies, and electronic lamp ballasts. Bus-voltage margin, gate-drive capability, switching loss, body-diode recovery, avalanche conditions, safe operating area, and heatsink performance should be verified in the final design.
评价
目前还没有评价