The MJ11033G from onsemi is a high-current PNP Darlington power transistor intended primarily for use as an output device in complementary general-purpose power amplifiers. Its monolithic Darlington construction incorporates a base-emitter shunt resistor and a protection diode. It can be paired with the NPN MJ11032G to form a complementary power-output stage.
The transistor has a 120V collector-emitter breakdown rating and a 120V collector-base voltage rating. It supports up to 50A continuous collector current, 100A peak collector current, and 2A continuous base current. Practical current capability depends on the safe operating area, heatsink performance, and junction temperature.
At a case temperature of 25°C, the MJ11033G is rated for up to 300W power dissipation. Maximum junction-to-case thermal resistance is 0.58°C/W, and the operating and storage junction-temperature range extends from −55°C to +200°C.
The device provides a minimum DC current gain of 1000 at IC=25A and VCE=5V. At IC=50A and VCE=5V, the specified minimum current gain is 400. This high-gain performance reduces the base-current requirement placed on the preceding driver stage.
Maximum collector-emitter saturation voltage is 2.5V at 25A with 250mA base current and 3.5V at 50A with 500mA base current. Maximum base-emitter saturation voltage is 3.0V at 25A and 4.5V at 50A. Conduction loss and thermal performance should be carefully evaluated because Darlington transistors generally exhibit higher saturation voltage than conventional single BJTs.
The MJ11033G is supplied in a metal TO-204/TO-3 two-lead through-hole package. Pin 1 is the base, pin 2 is the emitter, and the metal case is electrically connected to the collector. The “G” suffix identifies the lead-free version, supplied in trays of 100 units.
Key Specifications:
- Manufacturer: onsemi
- Manufacturer Part Number: MJ11033G
- Device Type: PNP Darlington Power Transistor
- Configuration: Single Transistor
- Complementary Device: MJ11032G
- Collector-Emitter Voltage: 120V
- Collector-Base Voltage: 120V
- Emitter-Base Voltage: 5V
- Continuous Collector Current: 50A
- Peak Collector Current: 100A
- Continuous Base Current: 2A
- Maximum Power Dissipation: 300W
- Minimum DC Current Gain: 1000 at 25A and 5V
- Minimum DC Current Gain: 400 at 50A and 5V
- Maximum Saturation Voltage: 2.5V at 25A
- Maximum Saturation Voltage: 3.5V at 50A
- Maximum Base-Emitter Saturation Voltage: 4.5V
- Integrated Features: Protection Diode and Base-Emitter Shunt Resistor
- Maximum Junction-to-Case Thermal Resistance: 0.58°C/W
- Operating and Storage Temperature: −55°C to +200°C
- Package: TO-204-2 / TO-3-2
- Pin Configuration: Pin 1 Base, Pin 2 Emitter, Case Collector
- Mounting Type: Through-Hole / Chassis Mount
- Packaging: Tray
- Standard Tray Quantity: 100 Units
- Environmental Classification: Lead-Free
Typical Applications:
Suitable for complementary power-amplifier output stages, high-current audio amplifiers, linear regulators, DC power drivers, linear motor-control circuits, and other applications requiring high DC current gain and substantial output-current capability. Safe operating area, second-breakdown limits, base-drive current, saturation loss, and heatsink performance should be evaluated in the final design.
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