The FGY100T120SWD from onsemi is a high-voltage, high-current power IGBT based on seventh-generation Field Stop VII technology. It integrates a Gen7 freewheeling diode and is optimized for low conduction loss, low switching loss, and smooth switching behavior in solar, UPS, and energy-storage power-conversion systems.
The device has a 1200V collector-to-emitter voltage rating and is classified by onsemi as a 100A IGBT. Maximum continuous collector current is 200A at a 25°C case temperature and 100A at a 100°C case temperature, while pulsed collector current is rated up to 400A. Practical current capability depends on switching frequency, thermal design, and junction-temperature limits.
At VGE=15V, IC=100A, and TJ=25°C, the collector-to-emitter saturation voltage is 1.69V typical and 2.0V maximum. At a 175°C junction temperature, the typical saturation voltage is 2.26V. Its positive temperature coefficient supports more stable current sharing when multiple devices are operated in parallel.
Typical total gate charge is 284nC, including 72.4nC gate-to-emitter charge and 101nC gate-to-collector charge. At 600V, 100A, RG=4.7Ω, and TJ=25°C, typical turn-on energy is 8.1mJ, turn-off energy is 2.8mJ, and total switching energy is 10.9mJ.
The integrated antiparallel diode has a typical forward voltage of 1.82V at 100A and 25°C, with a specified maximum of 2.22V. Under 600V, 100A, and 1000A/μs test conditions, its typical reverse-recovery time is 261ns, supporting high-power boost and inverter switching stages.
The FGY100T120SWD is supplied in a three-lead TO-247 package, with the mounting tab electrically connected to the collector. Junction-to-case thermal resistance is 0.17°C/W for the IGBT and 0.29°C/W for the diode. The device supports junction temperatures up to 175°C and is supplied as a lead-free, RoHS-compliant part in tubes of 30 units.
Key Specifications:
- Manufacturer: onsemi
- Manufacturer Part Number: FGY100T120SWD
- Product Family: Field Stop VII / FS7
- Device Type: N-Channel Power IGBT
- Configuration: IGBT with Co-Packaged Diode
- Collector-to-Emitter Voltage: 1200V
- Official Product Current Class: 100A
- Continuous Collector Current: 200A at TC=25°C
- Continuous Collector Current: 100A at TC=100°C
- Pulsed Collector Current: 400A
- Gate-to-Emitter Voltage: ±20V
- Transient Gate-to-Emitter Voltage: ±30V
- Typical Saturation Voltage: 1.69V at 100A and 25°C
- Maximum Saturation Voltage: 2.0V at 100A and 25°C
- Typical Gate-Threshold Voltage: 6.55V
- Typical Total Gate Charge: 284nC
- Typical Input Capacitance: 8489pF
- Typical Total Switching Energy: 10.9mJ at 600V, 100A, and 25°C
- Diode Typical Forward Voltage: 1.82V at 100A and 25°C
- Diode Typical Reverse-Recovery Time: 261ns at 100A
- IGBT Junction-to-Case Thermal Resistance: 0.17°C/W
- Diode Junction-to-Case Thermal Resistance: 0.29°C/W
- Junction and Storage Temperature: −55°C to +175°C
- Package: TO-247-3L
- Mounting Type: Through-Hole
- Mounting-Tab Connection: Collector
- Packaging: Tube
- Tube Quantity: 30 Units
- Compliance: Lead-Free and RoHS Compliant
- Product Status: Active
Typical Applications:
Suitable for boost and inverter stages in solar-energy systems, uninterruptible power supplies, residential and industrial energy-storage systems, high-voltage DC/AC converters, and other high-power switching applications. Gate-drive voltage, switching frequency, DC-bus margin, short-circuit protection, thermal performance, and safe operating area should be verified in the final design.
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