The MJ11032G from onsemi is a high-current NPN Darlington power transistor designed primarily as an output device in complementary general-purpose amplifier applications. Its monolithic Darlington construction includes a built-in base-emitter shunt resistor and protection diode, providing high DC current gain for high-current linear amplification and power-driving circuits.
The device has a 120V collector-emitter breakdown voltage and a 120V collector-base voltage. It supports up to 50A of continuous collector current, 100A of pulsed collector current, and 300W of power dissipation at a 25°C case temperature. Proper heatsinking and safe-operating-area derating are required in the final design.
The MJ11032G provides a minimum DC current gain of 1000 at 25A and VCE=5V, and a minimum gain of 400 at 50A and VCE=5V. This high-current-gain characteristic reduces the base-drive current required from the preceding driver stage.
Maximum collector-emitter saturation voltage is 2.5V at 25A with 250mA of base current and 3.5V at 50A with 500mA of base current. Maximum base-emitter saturation voltage is 3.0V at 25A and 4.5V at 50A. Conduction losses and thermal performance must be evaluated because Darlington devices generally have a higher saturation voltage than conventional single BJTs.
The transistor supports an operating and storage junction-temperature range from −55°C to +200°C, with a maximum junction-to-case thermal resistance of 0.58°C/W. It is supplied in a metal TO-204/TO-3 two-lead through-hole package. Pin 1 is the base, pin 2 is the emitter, and the metal case is electrically connected to the collector.
The “G” suffix identifies the lead-free package. The MJ11032G is supplied in trays of 100 units, and onsemi currently lists this specific orderable part as Active.
Key Specifications:
- Manufacturer: onsemi
- Manufacturer Part Number: MJ11032G
- Device Type: NPN Darlington Power Transistor
- Configuration: Single Transistor
- Collector-Emitter Voltage: 120V
- Collector-Base Voltage: 120V
- Emitter-Base Voltage: 5V
- Continuous Collector Current: 50A
- Pulsed Collector Current: 100A
- Continuous Base Current: 2A
- Maximum Power Dissipation: 300W
- Minimum DC Current Gain: 1000 at 25A and 5V
- Minimum DC Current Gain: 400 at 50A and 5V
- Maximum Saturation Voltage: 2.5V at 25A
- Maximum Saturation Voltage: 3.5V at 50A
- Integrated Features: Protection Diode and Base-Emitter Shunt Resistor
- Maximum Junction-to-Case Thermal Resistance: 0.58°C/W
- Operating and Storage Temperature: −55°C to +200°C
- Package: TO-204-2 / TO-3-2
- Pin Configuration: Pin 1 Base, Pin 2 Emitter, Case Collector
- Mounting Type: Through-Hole and Chassis Mount
- Packaging: Tray
- Standard Tray Quantity: 100 Units
- Environmental Classification: Lead-Free
- Product Status: Active
Typical Applications:
Suitable for complementary general-purpose amplifier output stages, high-current audio power amplifiers, linear power drivers, and other circuits requiring high DC current gain and substantial output-current capability. Safe operating area, second-breakdown limits, base-drive current, conduction loss, and heatsink performance should be evaluated in the final design.
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