The FQA40N25 from onsemi is an N-channel enhancement-mode QFET power MOSFET manufactured using planar-stripe and DMOS technology. It is optimized for low on-resistance, strong switching performance, and high avalanche-energy capability in switched-mode power supplies, active power-factor-correction circuits, and electronic lamp ballasts.
The device has a 250V drain-to-source voltage rating and supports 40A continuous drain current at a 25°C case temperature. Continuous current is rated at 25A when the case temperature reaches 100°C, while pulsed drain current is rated up to 160A. These ratings require appropriate thermal conditions and safe-operating-area derating.
At VGS=10V and ID=20A, the static drain-to-source on-resistance is 51mΩ typical and 70mΩ maximum. Gate-threshold voltage is specified from 3V to 5V; this threshold indicates the beginning of conduction and should not be treated as the required voltage for full enhancement.
Typical total gate charge is 85nC, with a specified maximum of 110nC. Typical input, output, and reverse-transfer capacitances are 3100pF, 620pF, and 70pF, respectively. Switching behavior depends on the external gate driver, gate resistance, drain voltage, and load current.
The FQA40N25 has an 800mJ single-pulse avalanche-energy rating and is 100% avalanche tested. Its intrinsic body diode supports 40A continuous and 160A pulsed current, with a maximum forward voltage of 1.5V and a typical reverse-recovery time of 220ns.
Maximum power dissipation is 280W at TC=25°C, maximum junction-to-case thermal resistance is 0.45°C/W, and the operating and storage junction-temperature range is −55°C to +150°C. The component is supplied in a three-lead TO-3P through-hole package with gate, drain, and source terminals.
Key Specifications:
- Manufacturer: onsemi
- Manufacturer Part Number: FQA40N25
- Device Type: N-Channel Power MOSFET
- Technology Family: QFET
- Drain-to-Source Voltage: 250V
- Continuous Drain Current: 40A at TC=25°C
- Continuous Drain Current: 25A at TC=100°C
- Pulsed Drain Current: 160A
- Gate-to-Source Voltage: ±30V
- Typical On-Resistance: 51mΩ
- Maximum On-Resistance: 70mΩ
- On-Resistance Test Conditions: VGS=10V, ID=20A
- Gate-Threshold Voltage: 3V to 5V
- Typical Total Gate Charge: 85nC
- Maximum Total Gate Charge: 110nC
- Typical Input Capacitance: 3100pF
- Typical Output Capacitance: 620pF
- Typical Reverse-Transfer Capacitance: 70pF
- Single-Pulse Avalanche Energy: 800mJ
- Maximum Power Dissipation: 280W
- Maximum Junction-to-Case Thermal Resistance: 0.45°C/W
- Body-Diode Maximum Forward Voltage: 1.5V
- Body-Diode Typical Reverse-Recovery Time: 220ns
- Operating and Storage Temperature: −55°C to +150°C
- Package: TO-3P-3L / EIAJ SC-65
- Terminal Configuration: Gate, Drain, Source
- Mounting Type: Through-Hole
- Environmental Classification: Lead-Free
Typical Applications:
Suitable for switched-mode power supplies, active power-factor-correction circuits, electronic lamp ballasts, and other high-voltage power-conversion circuits that meet the device’s electrical and thermal limits. Bus-voltage margin, gate-drive capability, switching losses, avalanche conditions, safe operating area, and heatsink performance should be verified in the final design.
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