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Infineon BSS84PH6327 60V 170mA P-Channel MOSFET SOT-23

Original price was: $163.60.Current price is: $137.00.

Infineon BSS84PH6327 is a P-channel enhancement-mode MOSFET featuring a -60V drain-source voltage rating, -170mA continuous drain current, and 8Ω maximum RDS(on) at -10V gate drive. Housed in an SOT-23 package and qualified to AEC-Q101, it is suitable for small-signal switching, low-current power control, and automotive electronic applications.

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The Infineon BSS84PH6327 is a compact P-channel enhancement-mode MOSFET designed for small-signal switching, power management, and low-current electronic applications. Featuring a drain-source voltage rating of -60V and a continuous drain current rating of -170mA at 25°C, this transistor provides reliable switching performance in a space-saving SOT-23 surface-mount package.

Part of Infineon’s SIPMOS small-signal MOSFET family, the BSS84PH6327 features a maximum drain-source on-resistance of 8Ω at VGS = -10V and ID = -170mA, or 12Ω at VGS = -4.5V and ID = -140mA. Its enhancement-mode operation, logic-level characteristics, and low gate charge make it suitable for compact switching circuits and microcontroller-controlled electronic designs with appropriate gate-drive voltage.

The device supports a maximum gate-source voltage of ±20V and a total power dissipation of 360mW at 25°C. It also provides avalanche-rated and dv/dt-rated performance, making it suitable for a variety of switching and signal-control applications.

Qualified according to AEC-Q101 automotive standards, the BSS84PH6327 offers reliable operation over a junction temperature range of -55°C to +150°C. Its compact SOT-23 package, RoHS-compliant construction, and tape-and-reel packaging make it suitable for automated SMT assembly in automotive electronics, industrial control systems, and general-purpose electronic equipment.

Key Specifications:

  • Manufacturer: Infineon Technologies
  • Part Number: BSS84PH6327
  • Product Family: BSS84P / SIPMOS
  • Product Type: P-Channel MOSFET
  • Channel Configuration: Single P-Channel
  • Operating Mode: Enhancement Mode
  • Drain-Source Voltage (VDS): -60V
  • Continuous Drain Current (ID): -170mA at 25°C
  • Pulsed Drain Current: -680mA
  • Maximum RDS(on): 8Ω at VGS = -10V
  • Maximum RDS(on): 12Ω at VGS = -4.5V
  • Gate Threshold Voltage (VGS(th)): -1V to -2V
  • Maximum Gate-Source Voltage: ±20V
  • Total Gate Charge: 1nC Typical at VGS = -10V
  • Maximum Power Dissipation: 360mW at 25°C
  • Input Capacitance: 15pF Typical
  • Operating Junction Temperature: -55°C to +150°C
  • Automotive Qualification: AEC-Q101
  • Package: SOT-23 (PG-SOT23-3)
  • Mounting Type: Surface Mount (SMD/SMT)
  • Compliance: RoHS Compliant, Halogen-Free
  • Packaging: Tape & Reel

Typical Applications:

  • Small-signal electronic switching
  • Low-current high-side switching
  • Power management and load switching
  • Microcontroller-controlled switching circuits
  • Automotive electronic control modules
  • Industrial control equipment
  • Signal switching and interface circuits
  • Compact consumer electronic devices

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