The Infineon IPW60R031CFD7XKSA1 is a high-performance 600V N-channel superjunction power MOSFET from the CoolMOS™ CFD7 series, designed for high-efficiency power conversion, resonant switching, and high-power electronic applications. Featuring a continuous drain current rating of 63A at 25°C case temperature and a maximum drain-source on-resistance of 31mΩ, this device delivers excellent electrical performance in a robust PG-TO247-3 through-hole package.
Built on Infineon’s advanced CoolMOS™ superjunction technology, the IPW60R031CFD7XKSA1 incorporates an ultra-fast body diode with low reverse recovery charge, reduced gate charge, and improved switching characteristics. These features help minimize conduction and switching losses, enhance power conversion efficiency, and support high power density designs.
The device features a maximum RDS(on) of 31mΩ and a typical value of 26mΩ at VGS = 10V, ID = 32.6A, and TJ = 25°C. Its typical total gate charge of 141nC and typical gate-to-drain charge of 50nC help optimize switching performance in high-frequency power conversion circuits.
Designed for demanding soft-switching applications, the CoolMOS™ CFD7 MOSFET is particularly suitable for LLC resonant converters and phase-shifted full-bridge (PSFB) zero-voltage-switching topologies. Its improved body diode performance and hard-commutation ruggedness help improve reliability in server power supplies, telecommunications infrastructure, and high-efficiency power systems.
The IPW60R031CFD7XKSA1 supports a maximum pulsed drain current of 277A under specified conditions, a maximum power dissipation of 278W at 25°C case temperature, and an operating junction temperature range of -55°C to +150°C.
Housed in a PG-TO247-3 through-hole package, the device offers efficient thermal management with a maximum junction-to-case thermal resistance of 0.45°C/W. Its lead-free, halogen-free, and RoHS-compliant construction makes it suitable for industrial power electronics and high-efficiency power conversion equipment.
Key Specifications:
- Manufacturer: Infineon Technologies
- Part Number: IPW60R031CFD7XKSA1
- Product Series: CoolMOS™ CFD7
- Product Type: N-Channel Power MOSFET
- MOSFET Technology: Superjunction
- Channel Configuration: Single N-Channel
- Operating Mode: Enhancement Mode
- Rated Drain-Source Voltage (VDS): 600V
- Drain-Source Voltage at Maximum Junction Temperature: 650V
- Continuous Drain Current (ID): 63A (TC = 25°C)
- Continuous Drain Current at TC = 100°C: 40A
- Pulsed Drain Current (ID,pulse): 277A
- Maximum RDS(on): 31mΩ (VGS = 10V, ID = 32.6A)
- Typical RDS(on): 26mΩ (VGS = 10V, TJ = 25°C)
- Gate Threshold Voltage (VGS(th)): 3.5V to 4.5V
- Maximum Static Gate-Source Voltage: ±20V
- Typical Total Gate Charge (Qg): 141nC
- Typical Gate-to-Drain Charge (Qgd): 50nC
- Typical Input Capacitance (Ciss): 5623pF
- Typical Output Capacitance (Coss): 111pF
- Typical Reverse Recovery Charge (Qrr): 0.96µC
- Typical Reverse Recovery Time (trr): 171ns
- Single-Pulse Avalanche Energy (EAS): 326mJ
- Maximum Power Dissipation: 278W (TC = 25°C)
- Maximum Junction-to-Case Thermal Resistance: 0.45°C/W
- Operating Junction Temperature: -55°C to +150°C
- Package: PG-TO247-3 (TO-247-3)
- Number of Pins: 3
- Pin Configuration: Gate, Drain, Source
- Mounting Type: Through Hole
- Product Qualification: Industrial
- Compliance: RoHS Compliant, Lead-Free, Halogen-Free
- Packaging: Tube
- Product Status: Active
Typical Applications:
- LLC resonant power converters
- Phase-shifted full-bridge (PSFB) converters
- Zero-voltage switching (ZVS) applications
- Server and data center power supplies
- Telecommunications power infrastructure
- Electric vehicle charging equipment
- Uninterruptible power supplies (UPS)
- Intermediate bus converters (IBC)
- Industrial switching power supplies
- High-efficiency power conversion systems
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