The Infineon IPW60R120P7 is a 600V CoolMOS™ P7 N-channel superjunction power MOSFET designed for high-efficiency switching power supplies and high-voltage power-conversion applications.
Based on Infineon’s seventh-generation CoolMOS platform, the device combines low conduction losses with low switching losses while maintaining good switching controllability. The P7 technology features low ringing tendency, strong body-diode commutation ruggedness and enhanced ESD robustness, making it suitable for both hard-switching and resonant converter topologies.
The IPW60R120P7 has a minimum 600V drain-source breakdown voltage and a maximum RDS(on) of 120mΩ at VGS = 10V and Tj = 25°C. Typical RDS(on) is approximately 100mΩ under the specified test conditions.
Its low gate-charge characteristics help reduce gate-drive losses and support efficient high-frequency switching. Typical total gate charge is 36nC, with a typical gate-drain charge of 11nC. Typical input capacitance is approximately 1544pF.
The device supports a 78A pulsed drain current and maximum power dissipation of 95W under specified conditions. The junction operating temperature range extends from -55°C to +150°C.
The CoolMOS P7 platform is suitable for both hard-switching PFC/PWM stages and resonant switching stages such as LLC converters. Typical applications include PC power supplies, adapters, LCD/TV power supplies, lighting systems, servers, telecom power supplies and UPS systems.
The IPW60R120P7 is supplied in a 3-pin PG-TO247-3 through-hole package, providing robust mechanical construction and effective thermal coupling for higher-power designs. The current Infineon ordering code is IPW60R120P7XKSA1, supplied in tubes.
Key Features
- Manufacturer: Infineon Technologies
- Part Number: IPW60R120P7
- Ordering Code: IPW60R120P7XKSA1
- Product Family: CoolMOS™ P7
- Product Type: Power MOSFET
- Technology: Superjunction MOSFET
- Channel Type: N-Channel
- Drain-Source Breakdown Voltage: 600V minimum
- Maximum RDS(on): 120mΩ
- Typical RDS(on): 100mΩ
- Gate Drive Test Voltage: 10V
- Typical Gate Threshold Voltage: 3.5V
- Gate Threshold Range: 3V to 4V
- Typical Total Gate Charge: 36nC
- Typical Gate-Drain Charge: 11nC
- Typical Input Capacitance: 1544pF
- Pulsed Drain Current: 78A
- Maximum Power Dissipation: 95W
- Single-Pulse Avalanche Energy: 82mJ
- MOSFET dv/dt Ruggedness: 80V/ns
- Body-Diode Commutation Speed: Up to 900A/µs
- ESD Robustness: >2kV HBM
- Suitable for Hard Switching
- Suitable for Resonant / Soft Switching
- Package: PG-TO247-3
- Package Type: TO-247
- Pin Count: 3
- Mounting: Through Hole / THT
- Operating Junction Temperature: -55°C to +150°C
- Lead-Free
- RoHS Compliant
- Product Status: Active
Typical Applications
- PFC Power Stages
- Hard-Switching PWM Converters
- LLC Resonant Converters
- AC/DC Power Supplies
- PC Power Supplies
- Power Adapters
- Server Power Supplies
- Telecom Power Supplies
- UPS Systems
- LED Lighting Power Supplies
- Industrial Power Supplies
- High-Voltage Switching Converters
The IPW60R120P7 is well suited for power designs requiring a 600V superjunction MOSFET with 120mΩ maximum on-resistance, low gate charge and TO-247 packaging.
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