The K4A8G165WG-BCWE from Samsung Electronics is a high-performance DDR4 SDRAM memory device designed for computing, networking, and embedded applications requiring high-speed data processing and reliable memory performance.
The device provides 8Gb density (1Gb x 8 organization) and operates with a low power supply voltage of 1.2V, delivering improved energy efficiency compared with previous DDR generations. DDR4 architecture provides higher bandwidth, improved signal integrity, and enhanced reliability for modern electronic systems.
K4A8G165WG-BCWE supports advanced DDR4 features including improved data transfer efficiency, low-power operation, and optimized memory performance. Its high-density configuration enables system designers to achieve greater memory capacity while maintaining compact board designs.
The memory device is packaged in a compact 96-ball FBGA package, supporting high-density PCB layouts and automated manufacturing processes. It is widely used in servers, networking equipment, industrial computers, embedded systems, consumer electronics, and high-performance computing platforms.
Key Features
- DDR4 SDRAM memory device
- Memory density: 8Gb
- Organization: 1Gb x 8
- Supply voltage: 1.2V
- High-speed data transfer
- Low power consumption
- Improved signal integrity
- High reliability operation
- Compact FBGA package
- Package: 96-ball FBGA
- Suitable for embedded and computing applications
- RoHS compliant
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