The TC58NVG0S3HTA00 from KIOXIA, formerly Toshiba Memory, is a 1Gbit SLC NAND Flash memory organized as 128M × 8 bits with an x8 parallel NAND interface. Its single-level-cell architecture provides nonvolatile storage for embedded firmware, boot code, configuration data and legacy industrial systems.
The device uses a 3.3V-class supply and operates from 2.7V to 3.6V. The exact TA00 ordering version is specified for a 0°C to +70°C commercial operating-temperature range. Industrial-temperature versions within the same family use different ordering codes.
The memory array is organized as (2048+128) bytes × 64 pages × 1024 blocks. Each page contains a 2048-byte main-data area plus a 128-byte spare/OOB area, resulting in a total page size of 2176 bytes. Each erase block contains 64 pages.
TC58NVG0S3HTA00 is a conventional raw SLC NAND device. KIOXIA/Toshiba product documentation specifies that ECC is required on the host side, with an ECC capability requirement of 8 bits per 512 bytes. A compatible NAND controller, MCU or processor therefore needs to provide the required error-correction function.
The device uses multiplexed x8 I/O pins for command, address and data transfers. Original device information specifies a 25ns minimum read cycle, along with standard NAND operations including page programming, block erase, status read and software reset. Typical block erase time is approximately 2.5ms.
The exact part is supplied in a 48-pin TSOP-I surface-mount package, with KIOXIA/Toshiba product documentation listing an approximate package size of 12 × 20mm.
This is now a legacy device. DigiKey currently marks TC58NVG0S3HTA00 as Obsolete, while Mouser lists it as End of Life / scheduled for obsolescence. For legacy BOM replacement, stock date codes and exact package compatibility should therefore be verified before purchasing.
Key Specifications:
- Brand: KIOXIA
- Former Brand: Toshiba Memory
- Part Number: TC58NVG0S3HTA00
- Product Type: NAND Flash Memory
- NAND Technology: SLC
- Process Technology: 24nm
- Memory Density: 1Gbit
- Organization: 128M × 8 Bits
- Data Bus Width: 8 Bits
- Interface: Parallel NAND
- Nominal Supply: 3.3V
- Supply Voltage: 2.7V to 3.6V
- Page Organization: 2048 + 128 Bytes
- Total Page Size: 2176 Bytes
- Pages per Block: 64
- Number of Blocks: 1024
- Main Area: 2048 Bytes/Page
- Spare/OOB Area: 128 Bytes/Page
- ECC: Host-Side Required
- ECC Requirement: 8 Bits / 512 Bytes
- Minimum Read Cycle: 25ns
- Typical Block Erase Time: Approx. 2.5ms
- Memory Type: Nonvolatile
- Operating Temperature: 0°C to +70°C
- Package: 48-TSOP I
- Pin Count: 48
- Approximate Package Size: 12 × 20mm
- Mounting Type: SMD / SMT
- Packaging: Tray
- Lifecycle: Obsolete / EOL through major distributors.
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