The LTC4359HS8#TRPBF from Analog Devices is a positive high-voltage ideal-diode controller that drives an external N-channel MOSFET to replace a conventional Schottky diode. This architecture reduces forward-voltage loss, power dissipation, heat generation, and PCB area in high-current power paths.
The device supports a wide 4V to 80V operating-voltage range and withstands reverse input voltages down to −40V. Typical operating current is 150μA, while shutdown reduces input current to approximately 9μA. It can control either a single N-channel MOSFET or a back-to-back MOSFET configuration.
The LTC4359 senses the voltage difference between its IN and OUT pins and actively regulates the external MOSFET gate to maintain approximately 30mV of forward drop at light loads. If the input supply fails, becomes shorted, or causes reverse current, the fast pull-down circuit turns the MOSFET off in approximately 0.3μs, minimizing reverse-current transients.
A shutdown-control input allows the external MOSFET to be switched off and reduces quiescent current. When used with back-to-back MOSFETs and external timing components, the LTC4359 can also operate as a load switch with controlled startup and inrush-current limiting.
The LTC4359HS8#TRPBF is an H-grade model specified for an ambient operating-temperature range of −40°C to +125°C. It is supplied in an 8-lead narrow-body SOIC package, with the “#TRPBF” suffix identifying the tape-and-reel ordering option.
Key Specifications:
- Manufacturer: Analog Devices
- Manufacturer Part Number: LTC4359HS8#TRPBF
- Device Type: High-Voltage Ideal-Diode Controller
- Operating-Voltage Range: 4V to 80V
- Reverse-Input Protection: Down to −40V
- External Power Device: N-Channel MOSFET
- MOSFET Configuration: Single or Back-to-Back
- Forward-Voltage Regulation: 30mV Typical
- Typical Operating Current: 150μA
- Typical Shutdown Current: 9μA
- Typical Gate Pull-Up Current: 10μA
- Typical Fast Turn-Off Time: 0.3μs
- SHDN Low Threshold: 0.6V Maximum
- SHDN Enable Threshold: 2V Maximum
- Ambient Operating Temperature: −40°C to +125°C
- Maximum Junction Temperature: 150°C
- Package: 8-Lead Narrow SOIC
- Mounting Type: Surface Mount
- Packaging: Tape and Reel
Typical Applications:
Suitable for automotive reverse-battery protection, redundant-power-supply ORing, supply hold-up, telecom infrastructure, computer systems, servers, solar systems, and other high-current power paths. The available load current is determined mainly by the selected external MOSFET, its on-resistance, voltage rating, thermal performance, and PCB layout.
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