The MJE340G from onsemi is a medium-power NPN silicon bipolar junction transistor (BJT) designed for high-voltage general-purpose applications. It offers a 300V collector-emitter voltage rating and a continuous collector current of up to 0.5A, making it suitable for high-voltage switching, regulation, and control circuits.
The device provides a maximum power dissipation of 20W at TC = 25°C and a junction-to-case thermal resistance of up to 6.25°C/W, supporting reliable operation in medium-power applications. Its DC current gain ranges from 30 to 240 at IC = 50mA and VCE = 10V.
MJE340G is particularly suitable for transformerless and line-operated equipment where high collector-emitter voltage capability is required. It is complementary to the MJE350 PNP transistor, allowing designers to create complementary high-voltage transistor stages.
The transistor is supplied in a TO-225 through-hole package and supports an operating and storage junction temperature range of -65°C to +150°C. The G suffix indicates a Pb-free package, and the device is RoHS compliant.
Key Features
- Transistor type: NPN BJT
- Collector-emitter voltage VCEO: 300V
- Continuous collector current IC: 0.5A
- Maximum power dissipation: 20W
- DC current gain hFE: 30–240
- Emitter-base voltage VEB: 3V
- Thermal resistance junction-to-case: 6.25°C/W max
- Operating junction temperature: -65°C to +150°C
- High-voltage general-purpose design
- Suitable for transformerless equipment
- Complementary transistor: MJE350
- Mounting type: Through Hole
- Package: TO-225
- Pb-free and RoHS compliant
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