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onsemi D45H11G 80V 10A PNP Power Transistor TO-220

Original price was: $1,186.00.Current price is: $1,141.00.

onsemi D45H11G is an 80V 10A PNP power transistor with 20A peak current, 1V maximum VCE(sat), approximately 40MHz bandwidth, 70W power dissipation, and a TO-220 package.

Availability: 100000 in stock

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SKU: D45H11G/3000pcs Category: Brand:

The onsemi D45H11G is an 80V, 10A PNP silicon power bipolar transistor in a 3-lead TO-220 through-hole package. It is designed for low collector-emitter saturation voltage and fast switching in general-purpose power amplification, switching regulators, converters, driver stages, and power-amplifier applications. Its complementary NPN device is the D44H11G.

The device is rated for 80V collector-emitter voltage, 5V emitter-base voltage, and 10A continuous collector current. Peak collector current reaches 20A under the specified pulse-width and duty-cycle conditions.

DC current gain is at least 60 at IC = 2A and VCE = 1V, and at least 40 at IC = 4A. Maximum collector-emitter saturation voltage is 1.0V at IC = 8A and IB = 0.4A, while maximum base-emitter saturation voltage is 1.5V at IC = 8A and IB = 0.8A.

For dynamic performance, the D45H series provides approximately 40MHz gain-bandwidth product at the specified 0.5A/10V test point and about 160pF typical collector capacitance. Typical switching characteristics for the PNP series include 135ns delay-plus-rise time, 500ns storage time, and 100ns fall time under the specified 5A test conditions.

Maximum power dissipation is 70W at TC = 25°C, with junction-to-case thermal resistance of 1.8°C/W maximum. Junction and storage temperature range is -55°C to +150°C. The D45H11G uses a Pb-free TO-220 package and is supplied in 50-piece rails.

Key Features:

  • Manufacturer: onsemi
  • Part Number: D45H11G
  • Device Type: Power Bipolar Transistor
  • Polarity: PNP
  • Configuration: Single
  • VCEO: 80V
  • VEBO: 5V
  • Continuous Collector Current: 10A
  • Peak Collector Current: 20A
  • hFE: ≥60 at 2A
  • hFE: ≥40 at 4A
  • VCE(sat): 1.0V Max at 8A
  • VBE(sat): 1.5V Max at 8A
  • Gain-Bandwidth Product: Approx. 40MHz
  • Typical Collector Capacitance: 160pF
  • Typical Delay + Rise Time: 135ns
  • Typical Storage Time: 500ns
  • Typical Fall Time: 100ns
  • Maximum Power Dissipation: 70W at TC = 25°C
  • RθJC: 1.8°C/W Max
  • Junction Temperature: -55°C to +150°C
  • Package: TO-220-3
  • Mounting: Through Hole
  • Packaging: Rail
  • Quantity: 50 pcs/rail
  • Qualification: Standard
  • Pb-Free / RoHS Compliant
  • Complementary NPN: D44H11G.

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