The onsemi KSC2073TU is a high-voltage NPN epitaxial silicon bipolar junction transistor (BJT) designed for power amplification, switching, and television vertical deflection output applications. Featuring a collector-emitter voltage rating of 150V, a maximum collector current of 1.5A, and a power dissipation rating of 25W at 25°C case temperature, this transistor provides reliable electrical performance in a TO-220-3 through-hole package.
The KSC2073TU features a DC current gain (hFE) range of 40 to 140, with a typical value of 75 at VCE = 10V and IC = 0.5A. Its typical transition frequency of 4MHz and maximum collector-emitter saturation voltage of 1V at IC = 500mA and IB = 50mA make it suitable for various low-frequency power amplification and switching circuits.
Manufactured using epitaxial silicon transistor technology, the device provides a collector-base voltage rating of 150V, an emitter-base voltage rating of 5V, and a maximum collector cutoff current of 10µA under specified test conditions. Its complementary PNP transistor is the KSA940, supporting complementary transistor circuit designs.
The KSC2073TU is housed in a TO-220-3LD package with three leads, providing convenient through-hole PCB mounting and compatibility with appropriate external heatsinks. Its maximum junction temperature rating of +150°C supports operation in properly designed thermal environments.
The device is suitable for maintaining and repairing existing electronic equipment, including television deflection circuits, transistor amplification stages, and general-purpose switching applications.
Key Specifications:
- Manufacturer: onsemi (ON Semiconductor)
- Part Number: KSC2073TU
- Product Series: KSC2073
- Product Type: Bipolar Junction Transistor (BJT)
- Transistor Polarity: NPN
- Semiconductor Technology: Epitaxial Silicon
- Configuration: Single Transistor
- Collector-Emitter Voltage (VCEO): 150V
- Collector-Base Voltage (VCBO): 150V
- Emitter-Base Voltage (VEBO): 5V
- Maximum Collector Current (IC): 1.5A
- Maximum Power Dissipation: 25W (TC = 25°C)
- DC Current Gain (hFE): 40 to 140
- Typical DC Current Gain: 75
- Maximum VCE(sat): 1V (IC = 500mA, IB = 50mA)
- Transition Frequency (fT): 4MHz Typical
- Output Capacitance (Cob): 50pF Typical
- Maximum Collector Cutoff Current: 10µA (VCB = 120V)
- Maximum Junction Temperature: +150°C
- Storage Temperature: -55°C to +150°C
- Complementary Transistor: KSA940
- Package: TO-220-3LD (TO-220-3)
- Number of Pins: 3
- Pin Configuration: Base, Collector, Emitter
- Mounting Type: Through Hole
- Compliance: Pb-Free, Halide-Free
- Packaging: Tube
- Lifecycle Status: Discontinued
Typical Applications:
- Television vertical deflection output circuits
- Low-frequency power amplification
- General-purpose transistor switching
- Electronic equipment repair and maintenance
- Complementary transistor amplifier circuits
- Industrial electronic control circuits
- Legacy power control equipment
- Through-hole PCB electronic designs
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