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onsemi NTMFS5C430NLT1G-01 40V 200A N-Channel Power MOSFET SO-8FL

Original price was: $0.38.Current price is: $0.36.

onsemi NTMFS5C430NLT1G-01 is a 40V, 200A single N-channel power MOSFET featuring 1.4mΩ maximum RDS(on), PowerTrench® T6 technology and a compact 5×6mm SO-8FL package for DC-DC conversion, synchronous rectification and motor-drive applications.

Availability: 100000 in stock

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SKU: NTMFS5C430NLT1G-01 Category: Brand:

The NTMFS5C430NLT1G-01 from onsemi belongs to the NTMFS5C430NL family of single N-channel power MOSFETs based on PowerTrench® T6 technology. It features a 40V drain-to-source voltage rating and supports up to 200A continuous drain current at TC=25°C, making it suitable for high-current, high-efficiency power switching applications.

The device offers a maximum RDS(on) of 1.4mΩ at VGS=10V and ID=50A, while maximum RDS(on) is 2.2mΩ at VGS=4.5V. Gate threshold voltage ranges from 1.2V to 2.0V, and the maximum gate-to-source voltage rating is ±20V.

Optimized switching characteristics include approximately 32nC typical total gate charge at VGS=4.5V and 70nC at VGS=10V. Typical input capacitance is 4300pF, while typical reverse-recovery charge is 80nC, helping balance conduction efficiency with switching performance.

The device is housed in a compact DFN5 / SO-8FL (Power 56) 5×6mm surface-mount package and supports junction temperatures up to +175°C. Maximum power dissipation is 110W at TC=25°C. onsemi lists applications including point-of-load modules, high-performance DC-DC converters, secondary synchronous rectification and DC motor drives.

Key Specifications:

  • Brand: onsemi
  • Part Number: NTMFS5C430NLT1G-01
  • Family: NTMFS5C430NL
  • Technology: PowerTrench® T6
  • Product Type: Power MOSFET
  • Configuration: Single
  • Channel Type: N-Channel
  • Gate Level: Logic
  • Drain-Source Voltage: 40V
  • Maximum Continuous Drain Current: 200A @ TC=25°C
  • Continuous Drain Current: 140A @ TC=100°C
  • Maximum Pulsed Drain Current: 900A
  • Maximum RDS(on): 1.4mΩ @ VGS=10V
  • Maximum RDS(on): 2.2mΩ @ VGS=4.5V
  • Gate Threshold Voltage: 1.2V to 2.0V
  • Gate-Source Voltage: ±20V
  • Typical Total Gate Charge: 32nC @ 4.5V
  • Typical Total Gate Charge: 70nC @ 10V
  • Typical Input Capacitance: 4300pF
  • Typical Output Capacitance: 1900pF
  • Typical Reverse Transfer Capacitance: 72pF
  • Typical Reverse Recovery Charge: 80nC
  • Single-Pulse Avalanche Energy: 493mJ
  • Maximum Power Dissipation: 110W @ TC=25°C
  • Junction Temperature: -55°C to +175°C
  • Package: SO-8FL / DFN5 / Power 56
  • Case Outline: 488AA
  • Package Size: Approx. 5 × 6mm
  • Mounting Type: SMD / SMT
  • RoHS Compliant: Yes

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